1) Ni base single crystal superalloy
Ni基单晶高温合金
1.
Stress rupture characteristics of a Ni base single crystal superalloy at different test conditions were investigated its fracture surface and longitudinal sections were examined by SEM.
利用SEM观察了一种Ni基单晶高温合金[001]方向持久断裂的断口、纵向剖面和变形后的组织结构。
2) Ni base DD3 single crystal superalloy
Ni基DD3单晶高温合金
1.
Under the condition of the solidification rate and thermal gradient just ahead of solid/liquid interface unchanged,the influences of melt superheating time on the solidification mi- crostructure of Ni base DD3 single crystal superalloy are studied.
在定向凝固固/液界面温度梯度及凝固速率保持恒定条件下,研究了熔体过热时间对Ni基DD3单晶高温合金凝固组织的影响。
3) Ni-base superalloy
Ni基高温合金
1.
Desulphurization during VIM of Ni-base superalloy;
Ni基高温合金真空感应熔炼脱硫
2.
NiCrAlY coatings were prepared on the cast Ni-base superalloy K17 using arc ion plating.
采用电弧离子镀技术在铸造Ni基高温合金K17上沉积NiCrAlY涂层 ,测定了K17合金和NiCrAlY涂层在90 0℃～ 110 0℃的氧化动力学曲线 。
3.
The reduction of sulfur content during the VIM of Ni-base superalloy was studied using CaO crucible, where the role of Al addition in desulphurization was analyzed.
研究了使用CaO坩埚真空感应熔炼炼Ni基高温合金过程中的脱硫情况;分析了加Al的脱硫作用;结合坩埚壁的XRD分析和成分分析数据讨论了CaO坩埚脱硫机理;对CaO坩埚内壁表面发生的化学反应进行了初步热力学计算和讨论。
4) Ni-based superalloy
Ni基高温合金
1.
Mechanical properties of Ni-based superalloy by laser shock processing;
激光冲击处理后Ni基高温合金的性能
5) Fe-Ni base superalloy
Fe-Ni基高温合金
6) Ni base superalloy
Ni基高温合金
1.
The change of sulfur content during the process of Vacuum induction melting (VIM) refining Ni base superalloy using CaO crucible and the influence of adding aluminium on desulphurization were studied.
研究了使用CaO坩埚在VIM法精炼Ni基高温合金过程中S的变化规律及加Al对脱S的影响。
2.
The changing law of N element during the process of VIM refining Ni base superalloy by using CaO crucible and the influence of aluminium to denitrogenation are studied .
研究了使用 Ca O坩埚在 VIM法精炼 Ni基高温合金过程中 N的变化规律及加 Al对脱 N的影响 ,初步分析了脱 N的影响因素及机理。
补充资料：锑化铟单晶
分子式：
CAS号：
性质：周期表第III、V族元素化合物半导体。共价键结合，有一定离子键成分。立方晶系闪锌矿型结构，晶格常数0.6478nm。密度5.775g/cm3。熔点525℃。为直接带隙半导体，室温禁带宽度0.18eV，本征载流子浓度1.1×1022/m3，本征电阻率6×10-4Ω·m，较纯晶体的电子和空穴迁移率为10和0.17m2/(V·s)。采用区域熔炼、直拉法制备。用于制作远红外光电探测器、霍耳器件和磁阻器件。
CAS号：
性质：周期表第III、V族元素化合物半导体。共价键结合，有一定离子键成分。立方晶系闪锌矿型结构，晶格常数0.6478nm。密度5.775g/cm3。熔点525℃。为直接带隙半导体，室温禁带宽度0.18eV，本征载流子浓度1.1×1022/m3，本征电阻率6×10-4Ω·m，较纯晶体的电子和空穴迁移率为10和0.17m2/(V·s)。采用区域熔炼、直拉法制备。用于制作远红外光电探测器、霍耳器件和磁阻器件。
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参考词条