1) sheet resistance
薄膜方阻
1.
XRD, SEM, and EDS tests, together with resistivity date, show a good correlation among the Pb to Ba ratio, grain size, and sheet resistance.
利用XRD、SEM和EDS表征方法结合薄膜方阻的测定,具体分析了Pb／Ba比和晶粒生长情况对BaPbO3薄膜导电性能的影响。
2.
The influence of heat treatment on the microstructure of the BaPbO3 thin films was analyzed by means of X-ray diffraction and scanning electron microscopy, and the sheet resistance was measured with the fo.
利用X射线衍射和扫描电镜测试分析了热处理工艺对薄膜微结构的影响,用四探针法测定了薄膜方阻。
2) film rectangular resistance
薄膜方块电阻
3) resistive films
电阻薄膜
1.
Electrical stability of Cr-Si-Ni resistive films in acidic and alkaline aqueous solutions;
Cr-Si-Ni电阻薄膜在酸碱溶液环境中的电学稳定性
2.
Effect of nitrogen on crystallization behavior and electrical properties of Cr-Si-Al resistive films;
氮元素对Cr-Si-Al电阻薄膜晶化行为及电性能的影响
3.
Crystallization and oxidation behaviors of Cr-Si-Ni-N resistive films;
Cr-Si-Ni-N电阻薄膜的晶化与氧化特性
4) resistive film
电阻薄膜
1.
Electrical stability and degradation mechanism of CrSi(Ni,Al) resistive films in alkaline aqueous environments;
碱性溶液环境中CrSi(Ni,Al)电阻薄膜的电学稳定性及劣化机理
2.
In order to select suitable materials for resistive films, microstructures of NiCr O and Cr Si sputtered films used for the mid range of resistance were analyzed.
合金成分、沉积条件以及热处理工艺是影响薄膜性能极其重要的因素 ,为便于电阻薄膜的合理选材 ,分析了应用于中阻值范围内的 Ni Cr- O系及 Cr- Si系溅射薄膜的膜层结构 ,对比了它们在热处理前后的电性能变化情况 ,并通过短期试验考核它们在应用中劣化的可能性 。
3.
Cr-Si-Ni resistive films were prepared on n-type Si (100) substrates by magnetron sputtering.
采用磁控溅射方法在Si(100)基底上制备了CrSiNi电阻薄膜,研究了不同温度退火时薄膜微观结构的转变过程以及对电阻率的影响。
5) film-damping
薄膜阻尼
1.
It is introduced how to select the position of film-damping treatment to obtain the best damping effect.
本文介绍薄膜阻尼结构在使用时，如何选取处理位置才能达到预期的效果。
2.
Using damping structureunder the surroundings of high temperature,oil corrodingetc, a new type of damping mechanism-film-damping is being studied.
为了适应高温、油腐等恶劣环境下使用的阻尼结构，对一种新型的阻尼机理─—薄膜阻尼进行了研究。
6) film resistor
薄膜电阻
1.
Various GaAs MMIC (monolithic microwave integrated circuit) passive components,including rectangle spiral inductors,MIM capacitors,and film resistors,are fabricated,and their equivalent circuit models are established.
制作了不同结构参数的GaAsMMIC无源元件,包括矩形螺旋电感、MIM电容和薄膜电阻,建立了无源元件的等效电路模型库,采用多项式公式表征无源元件的模型参数和性能参数,便于电路设计的应用。
2.
Through analyzing the operating principles of the micro thermal sensor, associating with thin film resistor and the substrate, we got TCR of the resistor, and analyzed the method of calculation and measurement of the TCR and the resistively of MEMS thermal sensor.
应用微型热敏传感器薄膜电阻的电阻温度系数设计方法,得到基于热敏电阻的电阻温度系数的计算和设计参数。
补充资料：方方锦
方方锦 蜀锦品种之一。在织物单一的底色上，以彩色经纬线配以等形的方格，格内饰以不同色彩的圆形或椭圆形的图案。这种装饰方法，是对唐代“红子格”的继承和发展。组织结构为缎地上现纬浮花。四川南充曾用上述方法制成方方被面。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条