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1)  cubic aluminum nitride
立方氮化铝
2)  CBN
立方氮化硼
1.
Enhancing bonding strength between CBN grits and plating layer with surface activation technique;
用表面活化处理法提高立方氮化硼与镀层的结合性能
2.
Effect of assembly mode on CBN synthesis;
组装方式对立方氮化硼合成的影响
3.
Influencing factors of cBN single crystal synthesis;
影响立方氮化硼单晶合成效果的工艺探讨
3)  cubic boron nitride
立方氮化硼
1.
Current Status of Research on Synthesizing Cubic Boron Nitride at Lower Pressure;
立方氮化硼低压合成研究现状
2.
Phase transformation in process of deposition of cubic boron nitride thin films;
立方氮化硼薄膜沉积过程的相变研究
3.
Preparation of cubic boron nitride films by radio frequency sputtering;
用射频溅射法制备立方氮化硼薄膜
4)  c-BN
立方氮化硼
1.
Influence of Substrate Temperature on Preparation of c-BN Thin Films with Wide Energy Gap;
衬底温度对宽带隙立方氮化硼薄膜制备的影响
2.
Cubic boron nitride (c-BN) nanocrystals have been synthesized by high-energy pulsed laser induced liquid-solid interfacial reaction.
 通过高能脉冲激光诱导丙酮 六方氮化硼界面反应制备出了立方氮化硼纳米晶体,透射电子显微镜分析表明制备的立方氮化硼(c BN)纳米晶体为直径约30~80nm的类球状晶体。
3.
A three-step technique has been developed to grow high quality cubic boron nitride(c-BN)fims by RF magnetron sputtering on p-tyoe Si(111)substrate.
用常规射频(RF)溅射系统,采用三步法在p型Si(111)上高重复率地制备出高品质的立方氮化硼(c-BN)薄膜。
5)  cubic silicon nitride
立方氮化硅
1.
The study progress of static high-pressure and dynamic high pressure synthesis of cubic silicon nitride powders is outlined in this paper.
立方氮化硅作为氮化硅的第三种物相,具有比α-Si3N4、β-Si3N4高的体积模量及硬度,是继金刚石与立方氮化硼之后的第三种超硬材料。
2.
The achievement and related concern of the cubic silicon nitride have been reviewed in this paper,including the progress in artificial synthesis,the study on its physical property,the synthesis of other Ⅳ(A) group denser nitrides(Ge3N4,Sn3N4,C3N4),an.
立方氮化硅是高温高压研究近期合成得到的一种新物相,与已经在工业上普遍使用的氮化硅的两种六方物相(α相和β相)相比,新物相的密度增加了26%,预期是一种新型功能材料。
3.
Experiments using a planar metal disc flyer driven by explosives and a cylindrical chamber was designed to synthesize cubic silicon nitride with the mixtures ofα-Si3N4 and copper powders as starting materials.
本实验的研究结果建立了一种冲击压缩技术可单次合成克量级的立方氮化硅,为进一步开展立方氮化硅的性能研究奠定了基础。
6)  h-AlN
六方单晶氮化铝
1.
In a stainless steel autoclave of 25ml capacity, pure hexagonal aluminum nitride (h-AlN) nanowire has been successfully synthesized by direct reaction of AlCl_3 with NaN_3 in non-solvent system at low temperature.
同时,提出了长直线状六方和面心立方单晶氮化铝纳米线的生长机理的假设,并对六方单晶氮化铝纳米线生长方向的人工控制也进行了讨论。
补充资料:氮化硅晶须补强氮化铝陶瓷基复合材料
分子式:
CAS号:

性质:以氧化铝陶瓷为基体,氮化硅晶须为增强体的复合材料,是一种性能优异的耐高温结构陶瓷。加入氮化硅晶须,可使氧化铝陶瓷的强度、韧性、抗热震性等得到明显的改善。在氧化铝基体中,加入20%(质量)氮化铝晶须制得的复合材料基强度提高了约50%,断裂韧性KIC达到氧化铝基体的1.5倍。这种材料可用于机械受力及耐磨部件以及作为耐热、耐腐蚀部件。

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