1) SnSe nanorods
SnSe纳米棒
1.
The synthesis of crystalline SnSe nanorods was successfully achieved via a chemical reaction between sodium selenosulfate (Na2SeSO3) and SnCl2·2H2O in alkaline aqueous solution in the presence of the complexing agent (trisodium citrate) at room temperature under ambient air.
作者曾将Se粉直接溶于浓NaOH溶液中后与Sn2+的柠檬酸溶液反应合成得到了SnSe纳米棒,但棒含量不高且长径比较小[13]。
2) nanorods
纳米棒
1.
Catalytic Synthesis and Luminescent Characteristics of GaN Nanorods;
GaN纳米棒的催化合成及其发光特性(英文)
2.
A Simple Method to Synthesize α-MnO_2 and β-MnO_2 Single-crystalline Nanorods;
简单方法合成α-MnO_2和β-MnO_2单晶纳米棒(英文)
3) nanorod
纳米棒
1.
Preparation of ZnO nanorod by hydrothermal method and its photocatalytic property;
水热法制备ZnO纳米棒及其光催化性能研究
2.
Hydrothermal synthesis and characterization of rare earth compound nanoparticles and nanorods;
稀土化合物纳米粒子和纳米棒的水热合成和表征
3.
Synthesis of zinc oxide nanorods by one step solid state reaction and their optical properties;
室温固相法合成ZnO纳米棒及其光学特性
4) GaN nanorods
GaN纳米棒
1.
GaN nanorods were successfully synthesized through the reaction of Ga2O3 gel with NH3 at 1 000℃ by a simple and efficient sol-gel process.
采用简单、有效的sol-gel法在1 000℃时通过氧化镓凝胶和氨气反应成功合成了GaN纳米棒。
2.
GaN nanorods were grown by metal organic chemical vapor deposition(MOCVD)with Ni(NO3)2 as the catalyst precursor and trimethyl gallium and high purity blue ammonia as the Ga and N sources,respectively,on Si(111)substrates.
本文分别用三甲基镓和高纯蓝氨作为Ga源和N源,Ni(NO3)2作为催化剂,在Si(111)衬底上制得针尖状GaN纳米棒。
5) Ag2S nanorods
Ag2S纳米棒
6) CuO nanorods
CuO纳米棒
1.
The 1-D CuO nanorods were prepared by solvothermal reaction using Cu(CH_3COO)_2·2H_2O and NaOH as raw materials and the mixture of ionic liquid 1-butyl-3-methylimidazolium chloride(Cl) and water as solvent.
2H2O和NaOH为原料,采用溶剂热反应法,制备了一维CuO纳米棒。
补充资料：tin selenide crystal SnSe
分子式：
CAS号：
性质：周期表第V、Ⅵ族化合物半导体。正交晶系离子性晶体，晶格常数0.444nm。密度6.19g/cm3，熔点860℃。为直接带隙半导体。一般为p型材料空穴有效惯性质量为0.15m。室温禁带宽度0.90eV，空穴迁移率1×10-2m/(V·s)。采用熔化再结晶法制备。用于制作红外探测器。
CAS号：
性质：周期表第V、Ⅵ族化合物半导体。正交晶系离子性晶体，晶格常数0.444nm。密度6.19g/cm3，熔点860℃。为直接带隙半导体。一般为p型材料空穴有效惯性质量为0.15m。室温禁带宽度0.90eV，空穴迁移率1×10-2m/(V·s)。采用熔化再结晶法制备。用于制作红外探测器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条