1) Hydride vapor phase epitaxy (HVPE)
氢化物气相外延(HVPE)
2) hydride vapor phase epitaxy(HVPE)
氢化物汽相外延(HVPE)
3) HVPE
氢化物气相外延
1.
High quality GaN film was grown by hydride vapor phase epitaxy(HVPE) using porous AAO as mask.
采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜。
2.
One of the best solutions to this problem would have been the use of freestanding GaN substrates, which are grown by hydride vapor phase epitaxy (HVPE) due to its high growth rate.
氢化物气相外延(HVPE)技术由于生长速率高，能提供生长GaN自支撑衬底而逐渐受到重视。
3.
This dissertation summarized the GaN crystal growth methods that had been studied, and focused on the hydride vapor phase epitaxy (HVPE) technics.
本文对目前研究比较多的几种生长GaN体单晶的方法进行了综述,主要针对氢化物气相外延(HVPE)技术进行了研究。
4) hydride vapor phase epitaxy
氢化物气相外延
1.
Design and making of hydride vapor phase epitaxy system for growing GaN;
GaN氢化物气相外延生长系统的设计与制作
5) HVPE(hydride vapor phase epitaxy)
氢化物气相外延法
6) HVPE-ELO GaN
HVPE横向外延GaN
补充资料：物气
1.指所谓物质性的妖气。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条