1) NiTi single crystal
NiTi单晶
1.
The deformation process of NiTi single crystal shape memory alloy (SMA) was monitored with high sensitive CCD system and the pseudo-elasticity is showed under tension.
本文利用高分辨率的CCD系统监测到NiTi单晶形状记忆合金在拉伸时的相变伪弹性的过程;利用X射线衍射法得到了NiTi单晶试样在拉伸方向的晶向;运用高分辨率的云纹干涉技术,获得了应力引起的NiTi单晶形状记忆合金相变时的变形场;利用高分辨率、高灵敏度的红外相机记录了NiTi单晶在拉伸状态下的温度变化规律;对低温下NiTi单晶的拉伸性能做了初步的研究,得到一些有意义的现象。
2) B2-NiTi intermetallic compound
B2-NiTi
3) NiTi wire
NiTi丝
1.
The elastic hysteresis loop of a super-elastic NiTi wire is determined by mean of optical lever method.
利用大学物理实验中的光杠杆法测定金属丝弹性模量的原理和设备,对具有超弹性的NiTi丝的弹性滞后环进行了测定。
4) single crystal
单晶
1.
Preparation of Single Crystal Cu-Al Based Shape Memory Alloy;
单晶Cu-Al系形状记忆合金制备研究
2.
Fracture characterization of the TLP welding specimen of a single crystal superalloy DD3;
镍基单晶合金TLP焊接件破坏特性研究
3.
Effect of heat treatment on microstructure of (Mo_(0.85)Nb_(0.15))Si_2 single crystal;
热处理对(Mo_(0.85)Nb_(0.15))Si_2单晶显微结构的影响
5) single crystals
单晶
1.
Lamellar single crystals of N-ethyl chitosan prepared from concentrated solutions;
从浓溶液制备N-乙基壳聚糖的片状单晶
2.
The preparation technology and development on the single crystals of refractory metals of their alloys were introduced in this paper.
主要介绍了难熔金属W,Mo,Ta,Nb及其合金单晶的制备技术,单晶的发展现状,并对单晶制备技术和单晶材料的发展方向提出了一些合理化建议。
3.
Ni~+ and Zn~+ ion implantations were performed at room temperature inα-Al_2O_3,MgO,YSZ,and TiO_2 single crystals and then annealed in oxidized atmosphere in order to fabricate metal and its oxide nanoparticles.
单晶α-Al_2O_3、MgO、YSZ和TiO_2在室温下分别注入Ni~+和Zn~+离子,然后在氧化气氛中退火,以形成金属及其氧化物纳米晶。
6) crystal
[英]['krɪstl] [美]['krɪstḷ]
单晶
1.
Synthesis Coordination Properties and Crystal Structure of Nd (C_9H_7O_2)_3·nH_2O Complexes (Ⅰ)Preparation of Monocrystal and Coordination Properties;
β－苯基丙烯酸钕配合物的单晶制备性质研究和晶体结构（Ⅰ）配合物的单晶制备及配位性质
2.
This article reviewed on the physical properties, the crystal structure, the growth methods, and the applications of the SiC single crystal The preparation of the SiC single crystal by sublimation method was introduced in detail The defects of SiC single crystal caused in the PVT process were discusse
本文综述了 Ｓｉ Ｃ 单晶的物理性质、晶体结构、制备过程以及应用等详细地介绍了大尺寸 Ｓｉ Ｃ 单晶的 Ｐ Ｖ Ｔ 法制备和该过程中的关键要素， 分析了 Ｐ Ｖ Ｔ 法制备的 Ｓｉ Ｃ单晶中所存在的缺陷及其成
3.
N-(3,5-Dichloro-2,4-difluorophenyl)-N′-(2,6-difluorobenzoyl)urea,an inhibitor of chitin synthesis,was synthesized and its crystal structure was measurcd.
合成得到苯甲酰脲类昆虫生长调节剂Ｎ－（３，５－二氯－２，４－二氟）－Ｎ′－（２，６－二氟苯甲酰基）脲（ｔｒｉｆｌｕｂｅｎｚｕｒｏｎ，伏虫隆），并对其单晶结构进行了测定和研究，发现其属于三斜晶，Ｚ＝６，且在一个晶胞中有三个具有不同构像的伏虫隆分子，而作为其活性元的脲桥以分子内氢键形成了一个稳定的六员环。
补充资料：直径6英寸硅单晶及单晶炉
直径6英寸硅单晶及单晶炉
巍 户亡‘砚.士释L朴品及沪晶护万引门l
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条