1) bicrystal
双晶体
1.
The cycilc deformation processes of two aluminium bicrystal specimens with the same grain boundary (GB) and with the stress axes perpendicular and parallel to the GB respectively had been numerically simulated by using a crystalline micromechanical model.
在实验基础上，用晶体细观力学方法模拟研究了纯铝双晶体在应力轴与晶界面分别垂直或平行时的循环形变过程。
2.
Fatigue tests were performed on specimens P(horizontal grain boundary) and V(vertical grain boundary) which were cut from the same aluminum bicrystal but their orientations are vertical to each other.
从同一块纯铝双晶体截取试样，分别垂直或平行于其晶界面进行对称拉压疲劳实验。
3.
The cyclic deformation of bicrystals was numerically simulated by using a crystalline micromechanical approach, to study the effects of crystallographic orientation and deformation properties of constituent grains.
应用晶体细观力学方法，分析了双晶体循环变形过程中组元晶粒取向及其变形性质（Ｂａｕｓｃｈｉｎｇｅｒ效应和循环硬化）的影响。
2) biaxial crystal
双轴晶体
1.
The shape of light wavefront in biaxial crystal;
双轴晶体中光的波面的形状
2.
Ray separation in second harmonic generation for biaxial crystals;
双轴晶体二次谐波产生中的光束离散
3) biaxial crystals
双轴晶体
1.
The crystal-length and acceptance parameters of SFG with biaxial crystals;
双轴晶体和频时晶体长度与允许参量分析
2.
The phase matching characteristics of the second harmonic generation in biaxial crystals with CW frequency turning;
常用双轴晶体连续调谐倍频时的相位匹配特性
3.
the indices of refraction and geometry in biaxial crystals are derived.
本文以折射率主轴坐标ｘｏｚ平面为例，推导出了双轴晶体中环参数的近似表达式。
4) copper bicrystal
铜双晶体
1.
Cyclic deformation behaviors of a copper bicrystal with an embedded grain and its matrix single crystal were compared.
比较了含镶嵌晶粒铜双晶体及其基体单晶体的循环变形行为，结果表明，双晶体的循环应力总是高于基体单晶体，结合表面滑移形貌和饱和位错组态，分别讨论了镶嵌晶粒和环绕晶界对双晶体循环变形行为的影响。
2.
Cyclic tension-tension deformation was carried out on a copper bicrystal which consists of a single and a double slip oriented component crystal.
本文对具有单、双滑移取向组元晶体的近垂直晶界钢双晶体进行拉-拉循环变形、得出铜双晶体中晶界及组元晶体的S-N曲线，比较了铜双晶体晶界及组元晶体疲劳寿命的差别，发现在相同的应力幅下晶界的疲劳寿命明显低于组元晶体的疲劳寿命，但两不同取向的组元晶体的疲劳寿命相差不大,通过对表面疲劳裂纹萌生的观察，发现垂直晶界铜双晶体在相同的循环载荷下萌生致命疲劳裂纹并导致疲劳断裂的难易顺序为：双滑移取向晶体→单滑移取向晶体→晶
3.
The cyclic saturation dislocation patterns within grains and near grain boundary (GB) were investigated in a copper bicrystal with a perpendicular by SEM ECC technique.
通过对垂直晶界［５９１３］⊥［５７９］铜双晶体进行循环变形，借助于扫描电镜电子通道衬度技术研究了组元晶体及晶界附近的循环饱和位错组态，结果表明两个组元晶体的表面滑移程度不同，两个组元晶体中的循环饱和位错组态也明显不同，驻留滑移带只能在组元晶体Ｇ１中形成，驻留滑移带能够到达晶界但不能穿过晶界。
5) dual transistor
双晶体管
6) hemitropy
半体双晶
补充资料：晶体管-晶体管逻辑电路
| 晶体管-晶体管逻辑电路 transistor-transistor logic 集成电路输入级和输出级全采用晶体管组成的单元门电路。简称TTL电路。它是将二极管-晶体管逻辑电路（DTL）中的二极管，改为使用多发射极晶体管而构成。TTL电路于1962年研制成功，基本门电路的结构和元件参数，经历了3次大的改进。同DTL电路相比，TTL电路速度显著提高，功耗大为降低。仅第一代TTL电路产品，就使开关速度比DTL电路提高5～10倍。采用肖特基二极管的第三代TTL电路，开关时间可缩短到3～5纳秒。绝大部分双极型集成电路，都是TTL电路产品。 |
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条