The diffraction characteristics of 1200 lp/mm ultraviolet ruled grating master and the second duplicate were simulated by differential theory and distinguished.

Analytical method of the diffraction characteristic of ruled grating based on profile fitting function;

CaF2 crystal with broad wavelength range and high transmittance has become the focus of the semiconductor industry with the development of UV-lithography.

A UV-exposure model and a dimensional tolerance model based on Fresnel diffraction theory are established by considering the impact of the refractive index and absorption coefficient of SU-8 photoresist on dimensional precision of UV-lithography.

The deep UV-lithography is one of the main processing technique of high aspect ratio microstructure fabrication.

The pattern transfer accuracy of deep UV lithography is investigated.

To study the relationship between the shape errors of photo-resist model based on UV lithography and processing parameters,the orthogonal experimentation was employed to design and organize the experiment for positive photo-resist AZ9260.