1) Threshold voltage
阈电压
1.
A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is performed to calculate the threshold voltage.
对FinFET器件(或称三栅MOSFET器件)的二维截面做了解析静电学分析以得出阈电压的计算公式。
2.
The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.
推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。
3.
Short channel effect of hot electron injection was taken into consideration in the threshold voltage model of submicrometer buried channel pMOSFET,so the model can be used as model for nMOSFET if symbols were changed correspondly.
亚微米埋沟pMOSFET的阈电压模型 ,该模型考虑了热电子发射等短沟道效应 。
2) threshold voltage
阈值电压
1.
Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET;
应变SiGe SOI量子阱沟道PMOSFET阈值电压模型研究
2.
Analytical threshold voltage model for fully depleted SOI MOSFETs;
全耗尽SOIMOSFET阈值电压解析模型
3.
2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects;
考虑量子效应的短沟道MOSFET二维阈值电压模型
3) threshold voltage
临阈电压
4) Voltage threshold
电压阈值
5) grid threshold voltage
栅阈电压
6) subthreshold value voltage
亚阈值电压
1.
A design method of low-power CMOS two stages amplifier working in the condition of subthreshold value voltage is introdluced,and an in-depth analysis of circuit parameter and performance is made.
因此提出一种工作在亚阈值电压范围内的低功耗CMOS两级运放的设计方法,并对电路的参数和性能做深入分析是很必要的。
补充资料：标准操作冲击电压波形(见冲击电压发生器)
标准操作冲击电压波形(见冲击电压发生器)
standard switching impulse voltage waveform
b .oozhun CooZuo ChongJld，onyo boxlng标准操作冲击电压波形(standard switchingimpulse voltage waveform)见冲击电压发生器。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条