1) Pt film
Pt薄膜
1.
Strongly (111) oriented Pt films were prepared on SiO_2/Si substrate as the bottom electrodes of PZT films by RF sputtering.
采用射频磁控溅射工艺在SiO2/Si衬底上成功制备了适用于PZT铁电薄膜底电极的180nm厚、沿(111)晶向强烈取向的Pt薄膜。
2) Pt thin film
Pt薄膜
1.
Preparation for Pt thin films by pulsed laser deposition
脉冲激光沉积法制备Pt薄膜的研究
2.
In the structure, the Pt thin film is used as both heater and temperature detector based on its temperature resistance characterization.
该方法采用微机械加工技术制作成悬空结构,利用Pt薄膜来做加热与测温电阻。
3) PT/PZT/PT thin film
PT/PZT/PT薄膜
1.
Microforce sensors based on PT/PZT/PT thin films;
PT/PZT/PT薄膜微力传感器
2.
The PZT and PT/PZT/PT thin films were fabricated using sol-gel method and investigated using X-ray diffraction;the leakage current property of them was measured.
运用Sol-Gel(溶胶-凝胶)法制作了PZT和PT/PZT/PT薄膜,采用X射线衍射技术表征了PZT和PT/PZT/PT两种薄膜的成相特征,用半导体参数测试仪测试了PZT和PT/PZT/PT两种薄膜的漏电流。
4) platinum-carbon film
Pt/C薄膜
5) Pt thin film
Pt超薄膜
1.
Local structures of Pt thin films studied by grazing incidence fluorescence XAFS;
掠入射荧光XAFS研究Pt超薄膜的局域结构
6) Pt/WO3 thin film
Pt-WO3薄膜
补充资料：Araldite PT-810
分子式：C12H15N3O6
分子量：297.27
CAS号：2451-62-9
性质：熔点95-98°C。水溶性<0.1 g/100 mL at 20°C。
分子量：297.27
CAS号：2451-62-9
性质：熔点95-98°C。水溶性<0.1 g/100 mL at 20°C。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条