1) organic static induction transistor
有机静电感应三极管
1.
According to the actual organic static induction transistor (OSIT) its physical model is established.
根据实际制作的有机静电感应三极管(OSIT)建立有机静电感应三极管的物理模型,选取合适的结构参数,采用有限元法计算OSIT内部的电位数值解,依据OSIT导电沟道内的电位分布,分析栅极长度变化对OSIT工作特性的影响。
2.
In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of PN junction and schottky junction.
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了PN结和肖特基结的特性。
2) organic static induction transistor
有机静电感应晶体管
1.
The influence of gate-drain distance on organic static induction transistor properties;
栅源距离对有机静电感应晶体管特性的影响
3) B-SIT
双极性静电感应晶体管
4) BSIT
双极型静电感应晶体管
1.
The Physical Research on the Dynamic Performance of BSIT;
双极型静电感应晶体管动态性能的物理研究
2.
Great attention has been paid to the Bipolar static Induction Transistor(BSIT) for its advantages, such as high current gain, low voltage arop and high turn on and turn off spead, etc.
双极型静电感应晶体管（ＢＳＩＴ）以其高电流增益，低饱和压降以及高的开关速度等优异性能受到人们的广泛关注。
5) bipolar static induction
双极静电感应
6) SIT
[英][sɪt] [美][sɪt]
静电感应晶体管
1.
A Study on Electrical Parameters of SIT;
静电感应晶体管(SIT)电性能参数的研究
2.
The gate region of conventional SIT(static induction transistor)is usually prepared by B diffusion in n-type Si,the preparation is complex and high in cost,so a new recessed-gate Schottky barrier SIT was proposed.
传统的静电感应晶体管多采用扩硼的方法制备栅极区,这种工艺热预算较高,使得工艺复杂程度和生产成本较高,基于此提出并设计了一种新型的槽栅型肖特基势垒静电感应晶体管。
补充资料：变电所静电感应
变电所静电感应
electrostatic induction of substation
b一ond一ansuoJ一ngdlon gonylng变电所静电感应(eleetrostatiesubstation)见恰电线路静电感应induetion of
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条