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1)  saturation voltage
饱和压降
1.
In this paper the dependence of the saturation voltage of the giant transistor (GTR) on the collector current is analyzed and tested.
结果表明,存在一个饱和压降阈值,超过这个阈值后,过流将产生。
2)  saturated voltage drop
饱和压降
1.
This paper introduces the design method and critical technology of two-staged power Darlington device whose hfe is no less than 12000, and make a detailed discussion on how to realize lower saturated voltage drop at a current ratio of 10A/1mA.
并对在10A比1mA的条件下实现低饱和压降的几项措施作了较详细的讨论。
3)  saturation voltage drop
饱和压降
1.
The degradation of power gain, saturation voltage drop and reverse breakdown voltage of EB junction in the application of the silicon microwave pulsed power transistor was introduced, and the degradation phenomenon is the focus of the research.
首先提出了硅脉冲双极型微波功率晶体等在应用中会出现功率增益、饱和压降以及EB结反向击穿电压参数的退化现象,并对此进行了研究探索。
4)  saturation pressure
饱和压力
1.
Calculation procedure of saturation pressure of sandstone pool in Liaohe sag;
辽河坳陷砂岩油藏饱和压力计算方法研究
2.
Influence analysis of nanometer refrigerator oil on HFC134a saturation pressure
纳米冷冻机油对HFC134a饱和压力的影响研究
3.
PC foams were prepared by a foaming simulator at different processing conditions of foaming temperature,gas saturation pressure.
结果表明,对于微孔PC泡沫塑料的成型存在一个最佳温度值;随着饱和压力升高,泡孔直径变小,泡孔的密度增大;气体饱和时间对PC泡沫塑料泡孔结构的影响不是很明显,在一定的饱和时间范围内,延长PC发泡时间有利于得到更均匀的泡孔结构。
5)  saturation voltage
饱和电压
1.
The influences of the surface polarization on the threshold voltage and the saturation voltage are investigated analytically.
考虑挠曲电极化,但不考虑界面上离子选择吸附产生的极化,文章详细讨论了表面极化P_s对平行向列液晶盒阈值电压和饱和电压的影响。
6)  pre-pressurization
预压饱和
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