1) high rate sputtering
高速溅率
2) sputtering rate
溅射速率
1.
There are many factors influencing the thin-film NiCr resistor s TCR(temperature coefficient of resistance),such as the vacuum degree during sputtering,sputtering rate,substrate temperature,film thickness and temperature and its holding time in heat-treatment.
影响NiCr薄膜电阻TCR的因素很多,我们分别从溅射淀积工艺和热处理工艺来研究和探讨NiCr薄膜电阻TCR与溅射时的真空度、溅射速率、基片温度、薄膜厚度及热处理温度和时间等因素的关系,从而为提高NiCr薄膜电阻的稳定性和降低其TCR值提供有益的条件。
2.
The total transport model was established and the sputtering rate and compound fraction (θ\-t)of the target were obtained through the analysis of the particle generation, transport and surface reaction The models are expressed by the macro technology parameters and the construction parameters of the chamber,which is of important applied value to sputtering deposited technique of film material
从粒子的产生、输运及表面反应出发 ,建立总的输运模型并得到靶的溅射速率和化合物的复盖度。
3) sputtering rate
溅镀速率
4) particle sputtering rate
粒子溅射速率
5) High Target Utilization Plasma Sputtering(HiTUS)
高利用率等离子体溅射
6) HPPMS
高功率脉冲磁控溅射
1.
As a new technology providing high ionization rate of sputtering materials to deposit dense films with high performance,the high-power pulse magnetron sputtering(HPPMS) technology was\' comrehensively investigated in developed countries though it has seldom been reported in China.
高功率脉冲磁控溅射技术(HPPMS)作为一种溅射粒子离化率高、可以沉积致密、高性能薄膜的新技术已经在国外广泛研究,但在国内尚未见研究报道。
补充资料：溅溅
1.流水声。 2.水疾流貌。 3.泛指液体疾溅貌。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条