1) composition graded layer
缓变层
2) strain buffer layer
应变缓冲层
3) Graded Buffer
组分渐变缓冲层
1.
Heteroepitaxial growth of InP/GaAs using low-temperature In_xGa_(1-x)P graded buffers
基于低温In_xGa_(1-x)P组分渐变缓冲层的InP/GaAs异质外延
4) slowly changing
缓变
1.
Entropy of the non-stationary and slowly changing Reissner-Nordstrm black hole;
缓变动态Reissner-Nordstrm黑洞的熵
2.
Using the thin film brick-wall model and WKB approximation,the entropy of scalar quantity field in the non-stationary and slowly changing spherically symmetric black hole with charge is calculated under local thermal balance.
采用薄膜brick-wall模型,运用WKB近似,计算了在视界附近局部热平衡下缓变动态球对称荷电黑洞标量场的熵。
3.
The entropy of the non-stationary and slowly changing spherically symmetric Schwarzschild space-time is calculated under local thermal balance.
研究了在视界附近局部热平衡下缓变动态球对称时空的熵。
5) Buffer layer
缓冲层
1.
Influence of buffer layers on the anisotropic magnetoresistance of NiCo films;
缓冲层对NiCo薄膜各向异性磁致电阻的影响
2.
Sputtering growth of preferential c-axis-oriented aluminum nitride film using homogeneous buffer layer;
利用同质缓冲层溅射生长c轴择优取向氮化铝薄膜
3.
Effects of buffer layer on properties of PMS-PNN-PZT piezoelectric thick film material;
缓冲层对PMS-PNN-PZT压电厚膜材料性能的影响
6) NiFe buffer layer
NiFe缓冲层
1.
NiFe buffer layer thin films with nano-sized crystallites were prepared by electrodeposition on semiconductor Si(111) substrates.
采用电化学沉积法,在半导体硅片上制备了具有纳米晶粒尺寸的NiFe缓冲层薄膜,并确定了获得Ni80Fe20合金的工艺条件。
补充资料：缓变pn结（gradedp-njunction）
缓变pn结（gradedp-njunction）
从p区到n区掺杂浓度逐渐改变的pn结，如用固态扩散工艺制造的pn结。大多数缓变pn结数学上可作为线性缓变结处理。通常由扩散工艺制备的pn结为缓变pn结，但在浅扩散结或高反偏时它更接近于单边突变pn结。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条