1) deep level trap
深能级陷阱
1.
Both positive and negative frequency dispersions of transconductance are simualted and analyzed with deep level traps located at the channel/buffer interface.
对沟道缓冲层界面深能级陷阱的分析表明,4H-SiC MESFET的跨导既有正向偏移,也有负向偏移。
2) trap level
陷阱能级
1.
The results indicate that Eu2+ ions act luminescent centers and Dy3+ ions as trap levels.
研究结果表明,掺杂的Eu在基质材料中主要充当发光中心,而Dy离子主要充当陷阱能级。
3) Trap energy
陷阱能级
1.
By analysis of dark current mechanism and experiments,it is found that the n-InSb reverse layer induced by trap energy of anode polarization layer connects with p-InSb layer,which plays a role of shunt resistance,and leads to the electric performance of detectors badly.
通过对其漏电流分析和制作MIS器件进行试验,发现阳极化层中的陷阱能级感应n型InSb表面产生反型,p/n结表面附近的反型层与p型层连接后起到分流电阻作用,导致器件电性能变差。
5) deep level defect
深能级缺陷
1.
We have investigated the electrically active deep level defects in n-type 6H silicon carbide through the use of a series of complimentary spectroscopic techniques such as deep level transient spectroscopy, positron annihilation spectroscopy and photoluminescence.
文章作者利用深能级瞬态谱 (DLTS) ,正电子湮灭谱 (PAS)和光致荧光谱 (PL)等谱分析技术研究了六方碳化硅中具有电活性的深能级缺陷 。
6) trap depth
陷阱深度
1.
The mainly characteristic of trapping materials is the trap depth.
表征陷阱材料的主要物理量是陷阱深度,准确计算出陷阱深度对于研究陷阱材料具有重要的意义。
2.
According to the basic model that describes the microcosmic dynamics process of light-generated carriers,it is analyzed that the free photoelectron decay time changes with the trap depth and density of shallow electron traps.
依据描述卤化银微晶中光生载流子的微观动力学过程的基本模型 ,分析了自由光电子衰减时间随浅电子陷阱深度和密度的变化情况 ,从而对浅电子陷阱的阈值效应进行了讨论 ,给出了确定卤化银乳剂中浅电子陷阱最佳掺杂条件的依据。
3.
The definitions of long axis trap and trap depth are given.
定义了长轴陷阱及陷阱深度,用它们刻划了该算法迭代过程中锯齿现象的几何特征。
补充资料：流动性偏好陷阱或凯恩斯陷阱（Keynes trap）
流动性偏好陷阱或凯恩斯陷阱（Keynes trap）：当利率极低，人们会认为这种利率不大可能再降，或者说有价证券市场价格不大可能上升而只会跌落时，人们不管有多少货币都愿意持在手中，这种情况被称为%26#8220;凯恩斯陷阱%26#8221;或%26#8220;流动偏好陷阱%26#8221;。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条