1) border-trap
边界陷阱电荷
2) interface-trapped charge
界面陷阱电荷
1.
Based on theoretical analysis,the errors of threshold voltage and drain current of SiC-based MOSFET coming from approximate calculation of interface-trapped charge were investigated.
因此,近似计算SiO2/SiC界面陷阱电荷不尽合理,应利用电子在界面态上的分布函数进行准确计算。
3) border traps
边界陷阱
1.
The timing characteristics of random telegraph signal (RTS) in deep submicron MOS devices are investigated,and a novel method is proposed to determine the spatial distribution of the border traps by forward and backward RTS measurements in the non-saturation state.
强场诱生并与电场奇异性相关的边界陷阱是影响深亚微米MOS器件可靠性的关键因素之一。
4) trapped charges
陷阱电荷
1.
The distribution of trapped charges and the relationship between the displacement of movable grating and applied voltage are analyzed in detail An e.
结构中SiO2绝缘层在外加电场作用下产生陷阱电荷,对器件的驱动特性产生影响。
5) charge traps
电荷陷阱
1.
In order to characterize accurately the distribution of charge traps on energy in polymer dielectric materials by using Photon-stimulated Discharge(PSD) Spectra,the raw PSD Spectra need to be normalized by the energy of light excitation.
为了利用光激电流谱准确地表征聚合物电介质材料中的电荷陷阱密度按能量分布的情况,需要将原始光激电流谱对光激发能量进行归一化。
6) trapped charge limited(TCL)
陷阱电荷限制(TCL)
补充资料：流动性偏好陷阱或凯恩斯陷阱（Keynes trap）
流动性偏好陷阱或凯恩斯陷阱（Keynes trap）：当利率极低，人们会认为这种利率不大可能再降，或者说有价证券市场价格不大可能上升而只会跌落时，人们不管有多少货币都愿意持在手中，这种情况被称为%26#8220;凯恩斯陷阱%26#8221;或%26#8220;流动偏好陷阱%26#8221;。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条