1) LTCC substrate
低温共烧陶瓷基板
1.
Effect of barrier of thin-film metallized LTCC substrates on eutectic solder.;
薄膜金属化低温共烧陶瓷基板的阻碍层对共晶焊的影响
2) low temperature co-fired ceramic substrate MCM
MCM低温共烧多层布线陶瓷基板
3) BaCO3-based low temperature co-sintering ceramic
BaCO3基低温共烧陶瓷
1.
The components’ preparation and the process of packaging used for the BaCO3-based low temperature co-sintering ceramic substrate material were studied.
对用于封装的BaCO3基低温共烧陶瓷基板LTCC材料进行了研究,包括组分配制以及陶瓷制备工艺研究。
4) LTCC
低温共烧陶瓷
1.
Researches and Development of Borosilicate Glass in LTCC Technology;
低温共烧陶瓷用硼硅酸盐玻璃的研究进展
2.
Current Status and Developmental Trend of LTCC;
低温共烧陶瓷的现状和发展趋势
3.
Soldering of SiC particulate reinforced aluminum(Al/SiC) and low temperature co fired ceramic (LTCC) materials;
铝基碳化硅增强材料(Al/SiC)和低温共烧陶瓷(LTCC)的钎焊
5) low temperature co-fired ceramic
低温共烧陶瓷
1.
Research on the low temperature co-fired ceramic material technique;
低温共烧陶瓷材料工艺研究
2.
The Research of Low Temperature Co-fired Ceramic(LTCC) Technology Manufacturing Process
低温共烧陶瓷(LTCC)工艺的研究
3.
The low temperature co-fired ceramic (LTCC) technique,which is an excellent packaging technique for achieving miniature and chip actualization of electronic components,has become a major method for electronic component integration,and has attracted the attention of many researchers.
低温共烧陶瓷(low temperature co-fired ceramic,LTCC)技术是实现电子元件小型化、片式化的一种理想的封装技术,已成为电子元件集成的主要工艺方式,引起了人们的广泛关注。
6) low temperature cofired ceramics
低温共烧陶瓷
1.
Discuss is the development of the low temperature cofired ceramics of series B 2 O 3 -P 2 O 5 -SiO 2 .
讨论B2O3-P2O5-SiO2系低温共烧陶瓷的研究过程。
2.
Equivalent cavity model based on low temperature cofired ceramics(LTCC) is put forward to realize package of the miniaturized transmission/receive module in Ka band.
为了能够在Ka波段采用低温共烧陶瓷(LTCC)技术实现收发组件小型化设计,提出了LTCC无源等效腔体模型。
补充资料：低温钛酸钡系热敏陶瓷
分子式： BaTiO3
CAS号：
性质：居里温度120℃以下的热敏陶瓷。除主成分钛酸钡外，还含锶、铝、钇、硅等氧化物。材料常温电阻率低，一般为10～102Ω·cm，升阻比(电阻落差)大，为103～108，耐压特性高，电压特性低。电极采用化镀镍或铜后，表面再镀银或烧银方法制成，也可直接烧渗银锌制成欧姆接触电极。主要用于制作彩电消磁、马达启动、过流保护等元件。
CAS号：
性质：居里温度120℃以下的热敏陶瓷。除主成分钛酸钡外，还含锶、铝、钇、硅等氧化物。材料常温电阻率低，一般为10～102Ω·cm，升阻比(电阻落差)大，为103～108，耐压特性高，电压特性低。电极采用化镀镍或铜后，表面再镀银或烧银方法制成，也可直接烧渗银锌制成欧姆接触电极。主要用于制作彩电消磁、马达启动、过流保护等元件。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条