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1)  pinch-off behavior
夹断特性
1.
From the self-consistent solution of 2-D Poisson equation and Schrdinger equation,the electron states and pinch-off behavior in quantum well channel of GaN HFET under longitudinal and transversal electric field were investigated.
从自洽求解二维泊松方程和薛定谔方程出发,研究了纵、横向电场作用下GaNHFET沟道中的电子态和夹断特性
2)  folder properties
文件夹特性
3)  fracture characteristic
断裂特性
4)  fracture characteristics
断裂特性
1.
Deformation and fracture characteristics of ferrite/bainite dual-phase steels
铁素体/贝氏体双相钢的变形和断裂特性
2.
Studies of fracture characteristics of high strength plastic pipes abroad are analyzed in detail.
简介了高强工程塑料管道在国内外的应用概况 ,对国外高强塑料管道断裂特性的研究进行了详细介绍 ,在此基础上 ,讨论了我国在该类材料断裂特性方面的研究与国际水平的差距 ,并对我国目前应尽快开展的工作提出了相应的建
3.
The effects of different structural parameters on the fracture characteristics were analyzed.
研究飞机机翼中整体翼梁结构的断裂特性,采用有限元素法计算不同结构参数应力强度因子,根据最大拉应力原理确定裂纹扩展轨迹,分析不同结构参数在裂纹增长中对断裂特性的影响,给出可供飞机整体翼梁损伤容限设计参考的计算结果和结论。
5)  fracture behavior
断裂特性
1.
Study on fracture behaviors of induced joints in RCC arch dams;
碾压混凝土拱坝诱导缝断裂特性研究
2.
Dynamic in situ observation for the fracture process of the materials has been put forward fracture mould of SiC/7075A1 composite materials have been established with the purpose of disclosure of the fracture behavior of SiC/7075A1 composite materials.
为了揭示SiCp/7075Al复合材料的断裂特性,建立了SiCp/7075Al复合材料的拉伸断裂模
3.
The fracture behaviorof granular structure and granular bainite by low tempering and high tempering in 17Cr2Ni2Mo steel were studied.
研究了17Cr2Ni2Mo钢粒状组织和粒状贝氏体经低温和高温回火后的断裂特性。
6)  turn-off characteristic
关断特性
1.
But the circuit stray inductance has serious influence upon the turn-off characteristic of IGCTs.
电路杂散电感会严重地影响IGCT的关断特性,增大器件的电压应力和关断损耗,甚至导致器件损坏。
2.
The turn-off characteristics determining the maximum operating frequency of ultra-fast photoconductive semiconductor switches are influenced by many factors.
超快光电半导体开关的最大重复工作频率由关断特性决定,而影响关断特性的因素很多。
3.
Purpose of the work is to propose a new device structure which suppresses parasitic latch-up effectively and also improves a turn-off characteristic by cascading of lateral high voltage devices LDMOS and LIGBT together without any considerable sacrifices of forward characteristic.
改进的结构在不影响LIGBT的正向导通特性的前提下,不仅有效抑制了寄生拴锁效应,而且改进了LIGBT的关断特性。
补充资料:夹叙夹议
1.边叙述边议论。
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