1) two dimensional electric field and electron states
二维场结构和电子态
1.
The new trends in developing high power high frequency HFETs and device commercializing are emphasized,sum and up some problems in performance optimization and commercialization of GaN HFET such as two dimensional electric field and electron states,nanometer metal and dielectric layers,strain energy band engineering,and dielectric potential .
综述了GaNHFET研究中材料生长和工艺研究的新进展,介绍了器件向高频、大功率方向发展的现状及其应用前景,总结了优化器件性能和商品化问题中的二维场结构和电子态、纳米金属介质层、应变能带工程及介质势垒等重要课题。
2) the ground state structure and electronic properties
基态结构和电子性质
5) 2D substructure search
二维子结构检索
补充资料:液晶聚合物的近晶和液晶织态结构
液晶聚合物的近晶和液晶织态结构
‘晶聚今““内代勇{李黑邀
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条