1) FN tunneling
FN隧穿
1.
FN tunneling and hot hole (HH) stress induced leakage current (SILC) transient characteristics in thin gate oxide are investigated.
分别研究了FN隧穿应力和热空穴 (HH)应力导致的薄栅氧化层漏电流瞬态特性 。
2) FN tunneling current
FN隧穿电流
1.
A method is presented for estimating the widths of interface in metal oxide semiconductor structures by using of the FN tunneling current oscillations.
给出一种利用 FN隧穿电流振荡来估计金属 -氧化物 -半导体场效应管的界面宽度的方法 ,数值计算的结果表明该方法可以精确而且方便地估计界面宽度 ,用这种方法估计得到的界面宽度在 0 。
3) fibronectin
Fn
1.
Fibronectins are a class of high - molecular weight a.
FN是一簇结构相似、免疫原性相同的大分子糖蛋白，广泛存在于细胞外基质中，是细胞间及细胞与基质间的粘连介质，具有维持细胞形态、结构，促进细胞粘附、移行生长，充当免疫调理剂以及损伤组织支架，利于组织修复等功能。
2.
Objective:To observe the effects of nicotine on the proliferation and the synthesis of fibronectin (Fn) of human periodontal ligament cells(PDLCs) cultured in vitro,and to approach the mechanism of the effects of smoking on the periodontitis.
目的:观察不同浓度尼古丁对体外培养的人牙周膜细胞(periodontal ligament cells,PDLCs)增殖及合成纤维结合蛋白(fibronectin,Fn)的影响,探讨吸烟对牙周炎的影响机制。
3.
The mRNA and protein levels of connective tissue growth factor(CTGF),transforming growth facter-B1(TGF-β1), fibronectin (FN) were detected by reverse-transcriptional-polymerase chain reaction (RT-PCR) and immunohistochemical staining, respectively.
12周末实验结束,检测24小时尿微量白蛋白,体重校正的内生肌酐清除率,肾脏肥大指数,计算肾小球毛细血管丛的平均直径、面积、体积及系膜基质扩张指数,透射电镜下观察肾脏超微结构变化,免疫组化及RT-PCR半定量TGFβ1、CTGF、FN mRNA及蛋白的表达。
4) tunneling
[英]['tʌnəlɪŋ] [美]['tʌnəlɪŋ]
隧穿
1.
Resonant tunneling of acoustic waves in 1D phononic crystal;
声波在一维声子晶体中共振隧穿的研究
2.
Quantum Magnetic-tunneling Through a CaAs/Ga_(1-x)Al_xAs Superlattices:a Calculation of the Transmission Coefficient;
GaAs／Ga_（1－x）Al_xAs超晶格结构中量子磁隧穿传输系数的计算
3.
Influence of electron-phonon interaction on single electron tunneling in a quantum dot molecule;
电声子相互作用对量子点分子中单电子隧穿的影响
5) Tunnel
[英]['tʌnl] [美]['tʌnḷ]
隧穿
1.
The current voltage characterization of a standard double barrier tunneling junctions(DBTJ) which forms room temperature single electron devices is computed by means of time dependent Schrdinger equation.
对形成室温单电子现象的典型串联双隧道结结构模型 ,利用含时薛定谔方程的求解 ,计算了其隧穿电流与偏压的关系 。
2.
In this letter, the current-voltage characteriazation of a standard tunneling junctions which forms room temperature single electron devices is computed by the solution of Schrodinger equation using WKB method.
本文对形成室温单电子现象的典型隧道结结构模型利用 WKB方法求解薛定谔方程计算其隧穿电流与偏压的关系。
3.
In this letter,the current voltage characteristic of a standard double barrier tunneling junctions (DBTJ),which forms room temperature single electron devices,is computed by solving the time dependent Schr[AKo¨D]dinger equation.
对形成室温单电子器件的典型串联双隧道结结构模型利用求解含时薛定谔方程计算了其隧穿电流与偏压的关系 。
6) quantum tunneling
量子隧穿
1.
Study of the quantum tunneling from the symmetric to asymmetric double-well potential;
从对称到非对称双势阱中量子隧穿特性的研究
2.
Scattering matrix method and numerical simulation for electronic quantum tunneling a double-barrier;
电子双势垒量子隧穿的散射矩阵方法及其数值模拟
3.
KIEs of this reaction are also sensitive to the temperature,which means that there is obvious quantum tunneling occurred in this reaction.
这个反应对温度比较敏感,所以反应存在明显的量子隧穿现象。
补充资料：隧穿效应
分子式：
CAS号：
性质：见隧道效应。
CAS号：
性质：见隧道效应。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条