1) neutron transm utation doping
中子辐照掺杂
2) neutron irradiation
中子辐照
1.
The intrinsic gettering in neutron irradiation czochralski-silicon;
中子辐照直拉硅中的本征吸除效应
2.
The effect of H,O and neutron irradiation on the tensile properties of the V-Cr-Ti alloys was summarized briefly.
综述了核聚变用结构材料V-Cr-Ti系合金的低活化特性、高温强度、耐液态金属腐蚀、抗中子辐照肿胀等性能的研究现状。
3.
Nanodiamond treated by neutron irradiation is studied by Raman spectroscopy.
利用Raman光谱对经中子辐照处理的纳米金刚石微粉进行了分析 ,中子能量为 0 5～ 1 0MeV ,辐照剂量 1 0 1 6～ 1 0 1 7n·cm-2 。
3) Neutron radiation
中子辐照
1.
Effects of neutron radiation on seed germination and seedling growth in ornamental kale;
中子辐照对观赏羽衣甘蓝种子萌发及幼苗生长的影响
2.
Radiation experiments include neutron radiation with the dose of2.
进行了中子辐照和γ辐照实验,其中中子注量为2。
3.
The neutron radiation effects on 0.
18μm的超深亚微米LDD NMOSFET的中子辐照效应。
4) fast neutron irradiation
快中子辐照
1.
The annealing behavior of V_2 in CZSi introduced by fast neutron irradiation was investigated by Flourier infrared spectrometric analyzer (FTIR), and the effect of the dose of the fast neutron irradiation on the formation of V_2 was also studied in detail.
通过傅立叶红外光谱仪(FTIR)技术研究了由快中子辐照直拉硅中引入的辐照缺陷——双空位(V2)退火行为,主要研究了不同中子辐照剂量对双空位的影响。
2.
In Czochralski silicon crystals (CZSi) through fast neutron irradiation, formation and conversion of defects were investigated using Fourier transform infrared spectroscopy (FTIR), Positron annihilation technology (PAT) and Scanning electron microscope(SEM).
本文对直拉硅样品进行了不同剂量的快中子辐照，在硅中引入大量的亚稳态缺陷，研究这些亚稳态缺陷的形成，并在较宽的温度范围内对辐照样品进行了退火处理，研究退火后亚稳态缺陷的转化及同硅中氧的相互作用，应用傅立叶变换红外光谱技术(FTIR)、正电子湮没技术(PAT)和扫描电镜(SEM)进行了测试。
5) Thermal neutron irradiation
热中子辐照
6) neutron exposure
中子辐照量
1.
Besides, by the comparison of the model parameters of the three lead rich stars with those of two very metal poor stars (LP625 44 and LP706 7), we find out that the average neutron exposure of the former is larger.
另外 ,铅星与非铅星的模型参量对比显示 ,铅星的平均中子辐照量远大于非铅星 ,而其挖掘程度明显小于非铅星 。
补充资料：掺杂石英光纤和紫外辐照计
掺杂石英光纤和紫外辐照计
掺杂石英光纤和紫外辐照计 顾茸安供稿
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条