1) Ultra-thin interior base
超薄内基区
2) ultra-thin base
超薄基区
1.
A novel mesa ultra-thin base AlGaAs/GaAs HBT is designed and fabricated with wet chemical selective etch technique and monitor electrode technique.
利用化学湿法选择技术和监控电极技术设计并研制了一种新型台面结构超薄基区AlGaAs/GaAs负阻异质结双极晶体管,该器件具有独特且显著的电压控制型负阻特性,其峰谷比可高于120。
3) ultrathin base
超薄基区
1.
This paper has reported the astable multivibrator composed of negative differential resistance heterojunction bipolar transistor with ultrathin base (UTBNDRHBT).
报道了由超薄基区负阻异质结双极晶体管(UTBNDRHBT)构成的非稳多谐振荡器,具有高速、可调控等优点。
4) Ultra-Thin Base Negative Differential Resistance Heterojunction Bipolar Transistor (UTBNDRHBT)
超薄基区负阻HBT
5) ultrathin bedrock
超薄基岩
1.
Based on measured rock pressure and experimental data under thick watered loose bed of Wanbei mining area,dimorphism and mutation characteristics of ultrathin bedrock working face roof are discussed.
以皖北矿区厚含水松散层下超薄基岩开采工作面实测矿压资料与实验数据为依据,论述了超薄基岩工作面顶板的风化变异特征。
6) thin base
薄基区
1.
InGaP-GaAs thin base (8 nm) dual heterojunction material is grown by molecular beam extension ( MBE) , and a heterojunction bipolar transistor( HBT) with negative differential resistance ( NDR) characteristic is fabricated.
讨论了薄基区负阻异质结晶体管的负阻特性及其物理机制。
补充资料：-庚内酯、丙位庚内酯、α-丙基-&gamma
CAS: 105-21-5
分子式: C7H12O2
分子质量: 128.17
中文名称: 4-庚内酯、γ-庚内酯、丙位庚内酯、α-丙基-γ-丁内酯
英文名称: dihydro-5-propyl-2(3H)-Furanone、dihydro-5-propyl-2(3h)-furanon、4-hydroxyheptanoic acid lactone、gamma-heptalactone、gamma-propiobutyrolactone、heptanolide-4,1、(+/-)-4-heptanolide、4-hydroxyheptanoic acid,gamma-lactone
分子式: C7H12O2
分子质量: 128.17
中文名称: 4-庚内酯、γ-庚内酯、丙位庚内酯、α-丙基-γ-丁内酯
英文名称: dihydro-5-propyl-2(3H)-Furanone、dihydro-5-propyl-2(3h)-furanon、4-hydroxyheptanoic acid lactone、gamma-heptalactone、gamma-propiobutyrolactone、heptanolide-4,1、(+/-)-4-heptanolide、4-hydroxyheptanoic acid,gamma-lactone
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条