Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in Ⅲ-nitrides quantum dots;

Effects of hydrogenic impurity on localized excitons in In_xGa_(1-x)N/GaN quantum dots;

The binding energy and the photon energy dependence of the photoionization cross-section are calculated for a hydrogenic impurity in GaAs/Ga 1-xAl xAs quantum well wires.

Binding energy of a hydrogenic-like impurity in GaN/Al_xGa_(1-x)N quantum dots;

Concerning the domino effect of the built-in electric field and the three-dimension confinement,exciton states with hydrogenic-like impurity confined in GaN/AlxGa1-xN quantum dots(QDs) are studied by means of a variational approach within the framework of effective-mass approximation.

Studied the binding energies of a hydrogenic-donor impurity in a cylindrically symmetric GaAs/GaAlAs-coupled quantum disk in the presence of a uniform magnetic field for different disk and barrier thicknesses,disk radii,and donor ion positions within the disk.

We report the binding energies of a hydrogenic-donor impurity in a cylindrically symmetric GaAs/Ga_(0.

BaTiO3 ceramics were prepared by conventional solid state processing with MnCO3 and Co2O3 doped as acceptor,La2O3,Nb2O5 and Bi2(SnO3)3 doped as donors.

The experiment shows that the dielectric properties of BaTiO3 ceramics are related with the rate of donors n and acceptors p.

The ground state binding energy of a polaron bound to a donor impurity near the interface of a semiconductor heterojunection is investigated with a modified LLP variational method by considering the influence of a triangular potential,the electron phonon and impurity phonon interaction,including the effect of half space bulk longitudinal and interface optical phonon modes.

A variational method is used to investigate the ground state of an electron bound to a donor impurity near a single semiconductor heterojunction by considering the influence of a triangular potential and the screened Coulombic impurity potential.