1) undoped SI-In P
未掺杂SI-InP
2) undoped semi-insulating InP
非掺杂半绝缘InP
3) Si-doped
Si掺杂
1.
Study of the Optical Properties of Si-doped Rutile TiO_2 by First-principles Theory
Si掺杂金红石TiO_2光学特性的第一性原理研究
2.
Si-doped AlxGa1-xAs layers were grown by gas source molecular beam epitaxy with a constant Si cell temperature for all samples.
为比较Al組份对Si掺杂浓度的影响,在用气态源分子束外延生长(GSMBE)掺Si n型AlxGa1-xAs(0≤x≤1)的所有样品时,n型掺杂剂Si炉的温度恒定不变。
3.
A series of Si-doped nanocrystalline titania powders were prepared by hydrothermal method using titanium tetrachloride(TiCl4) and sodium silicate(Na2SiO3) as precursors.
同时发现在Si掺杂的样品中有Ti-O-Si键的存在。
4) impurities of Si and Na
Si、Na掺杂
5) Si doped GaN
Si掺杂GaN
6) Mn-doped Si
Mn掺杂Si
补充资料：indium phosphide (inp)
CAS：22398-80-7
中文名称：磷化铟；磷化铟晶体INP
英文名称：indium phosphide；indium monophosphide；indium phosphide (inp)
中文名称：磷化铟；磷化铟晶体INP
英文名称：indium phosphide；indium monophosphide；indium phosphide (inp)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条