1) saturation ionization of impurities
杂质饱和电离
1.
The origin of saturation ionization of impurities, semiconducting properties of Gray Tin and Gunn effect is analyzed.
通过对半导体杂质饱和电离、灰锡（α－Ｓｎ）半导体特性以及Ｇｕｎｎ效应等的解释，指出能态密度在研究半导体物理现象中的重要应用。
2) ionization saturation
电离饱和
3) saturation ionization
饱和电离
4) unsaturated impurity
不饱和杂质
5) ionization of dopant
杂质电离
1.
In SiC,the relations between the influence of valley-orbit splitting on ionization of dopant and doping concentration,temperature and the depth of dopant energy level were investigated systematically through theoretical computation.
对SiC中基态施主能级分裂对杂质电离的影响,与温度、掺杂浓度和杂质能级深度的关系进行了系统研究。
6) saturation current of ionization chamber
电离室饱和电流
补充资料：碰撞电离(见电离)
碰撞电离(见电离)
collision ionization
pengZhLjo门g凶。川!碰撞电离(eollision ionization)见电离。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条