1) RF-PCVD
高频等离子体气相沉积
1.
PREPARATION AND CHARACTERIZATION OF MICROSTRUCTURE FOR NOVEL CARBON NANO-PARTICLES BY RF-PCVD;
以C2H2为反应气体,Ar为等离子体工作气体和冷却气体,采用高频等离子体气相沉积法制备一种新颖的纳米碳粒,以TEM、HRTEM、BET、XRD、FTIR、XPS手段表征分析了该纳米碳粒的内部微结构、粒径、比表面积、表面官能团和表面元素。
2) very-high-frequency plasma-enhanced chemical vapor deposition
超高频等离子体增强化学气相沉积
1.
Deposition of μc-Si:H films at a high rate was investigated using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) in this paper.
采用超高频等离子体增强化学气相沉积(VHF-PECVD)技术,实现了微晶硅硅薄膜的高速沉积,并通过改变气体总流量改变气体滞留时间,考察了气体滞留时间在化学气相沉积(CVD)过程中对薄膜的生长速率以及光电特性和结构特性的影响。
3) very high frequency plasma enhanced chemical vapor deposition
甚高频等离子体增强化学气相沉积
1.
Study of space voltage distribution between large-area parallel-plate electrodes for very high frequency plasma enhanced chemical vapor deposition;
甚高频等离子体增强化学气相沉积大面积平行板电极间真空电势差分布研究
2.
In the process of the high growth rate μc-Si:H film deposited by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD),the high energy ion impinging on the growing surface could deteriorate the device performance.
在采用高压高功率的甚高频等离子体增强化学气相沉积(VHF-PECVD)技术高速沉积微晶硅(μc-Si:H)太阳电池过程中,产生的高能离子对薄膜表面的轰击作用会降低薄膜质量和破坏p型掺杂层(p层)与本征层(i层)之间的界面特性。
3.
The deposition parameters of hydrogenated microcrystalline silicon(μc-Si:H)films were optimized for two factors,the siliane concentration and total flow rate,under high deposition power density and high deposition pressure by very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD).
采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术在高功率密度和高压强条件下,通过改变硅烷浓度和气体总流量对薄膜沉积参数进行了两因素优化,最终在硅烷浓度为4。
4) VHF-PECVD
甚高频等离子体增强化学气相沉积
1.
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) at different silane concentrations in a P chamber.
在掺杂P室采用甚高频等离子体增强化学气相沉积( VHF-PECVD)技术,制备了不同硅烷浓度条件下的本征微晶硅薄膜。
2.
Finally, high-quality microcrystalline silicon (μc-Si:H ) materials and relatively high efficiency solar cells using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) were prepared in a single chamber.
本文在单室中采用甚高频等离子体增强化学气相沉积技术,以降低单室沉积工艺中的界面污染和提高单室沉积微晶硅电池的性能为目标,详细研究了单室沉积中的交叉污染问题、不同处理硼污染的方法及其在微晶硅电池中的初步应用。
3.
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) in a single-chamber under different boron-contamination conditions.
采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了不同腔室环境下的微晶硅薄膜。
5) very high frequency plasma enhanced chemical vapor deposition(VHF-PEVCD)
甚高频等离子体化学气相沉积(VHF-PEVCD)
6) very high frequency plasma-enhanced chemical vapor deposition
甚高频等离子体增强化学气相沉积
1.
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
2.
Microcrystalline silicon solar cells with the variation of silane concentration (SC) and discharge power were fabricated by very high frequency plasma-enhanced chemical vapor deposition.
采用甚高频等离子体增强化学气相沉积技术成功地制备了不同硅烷浓度和辉光功率条件下的微晶硅电池 。
补充资料：体气
体气 体气 病证名。人体局部汗腺分泌有特异气味之病证。见《外科正宗》卷四。又名体臭。陈氏谓：“体气一名胡气，此因父母有所传染者，又有胡胎而受生者，故不脱本来气质。”该证多因遗传或湿热内郁所致。所发多见于腋窝，其他如脐窝、外阴、肛围、腹股沟或乳晕等处亦有所见。证见局部之汗腺分泌物带有特有之汗臭味，或如狐臭，严重者可在较远处即可闻知。夏季汗出多者较重。治宜常以五香散（《外科正宗》方）擦之，或用枯矾粉干扑，或密陀僧散加枯矾粉外扑。严重者可手术治疗。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条