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1)  16α,17α-Epoxy progesterone
奥氏氧化物
2)  W-oxide
沃氏氧化物
3)  austenizing
奥氏体化
1.
The quenching microstructure of low carbon steel after austenizing with and without DC electric field was studied.
研究了低碳钢在直流静电场中进行奥氏体化后淬火的显微组织。
2.
From the mechanics of steel austenizing ,a mathimatic model of austenizing process is set up.
从钢的奥氏体化机理入手,建立了加热奥氏体的数学模型;并对激光加热温度场和硬化带进行了估算。
3.
The microstructure of 45CrMoV steel after austenizing followed by air cooling and tempering at various temperatures have been studied, using TEM and SAD.
利用透射电镜和选区电子衍射研究了45CrMoV钢奥氏体化后空冷及其在不同温度回火的显微组织。
4)  austenization
奥氏体化
1.
Effects of Nb on the austenization and static recrystallization behavior of 20MnSi steel;
铌对20MnSi钢奥氏体化和静态再结晶的影响
2.
Simulation of austenization during intercritical annealing for Fe-C-Mn cold rolling dual phase steel;
Fe-C-Mn系冷轧双相钢两相区奥氏体化过程模拟
3.
In this paper the quenching microstructure of the low carbon steel in the austenization with the application of an electric field 20kV/cm between the specimen and a companion electrode of an electrostatic circuit is studied.
研究了电场奥氏体化对低碳钢的淬火组织的影响。
5)  austenitizing ['ɔ:stənə'taiziŋ]
奥氏体化
1.
The effect of austenitizing temperature and time on microstructure and property of 27SiMn steel was researched by the orthogonal regressive principle.
采用正交组合回归设计试验方法 ,研究了奥氏体化温度和时间对 2 7SiMn钢组织和性能的影响。
2.
The Ms points are 320℃,306℃,280℃ respectively when the austenitizing temperatures are 950℃,900℃ and 850℃ and rise with increasing of austenizing temperature.
测定了 45Si2Cr钢分别在 95 0℃和 90 0℃奥氏体化后的连续冷却转变曲线。
3.
The results show that carbon atoms diffuse in short distance and no austenite occurs when the testing steel is austenitized at 720~750 ℃; they diffuse in long distance and austenite occurs at 755℃ which is the turning point of austenitizing temperature.
利用光学显微镜、扫描电镜(SEM)、维氏硬度计以及thermo-calc和photoshop软件对经不同温度奥氏体化、淬火后的GCr15轴承钢试样的显微组织进行了分析研究。
6)  ostwald ripening
奥氏熟化
1.
Computer simulation of sintering process of BaTiO_3-based PTCR ceramics Ⅱ.Grain growth of intermediate and final stages of sintering and ostwald ripening process;
钛酸钡系PTCR半导体陶瓷烧结过程的计算机模拟Ⅱ.烧结中后期及奥氏熟化过程中的晶粒生长
2.
A novel model that included particles formation based on ' LaMer model' and a subsequent particles growth through ' Ostwald ripening ' was established.
首先,从理论上分析了该方法中纳米颗粒形成和生长的热力学和动力学过程,提出了一个由符合LaMer成核扩散模型的颗粒形成和随后经奥氏熟化发生生长两部分组成的新模型,采用新提出的模型解释了Nakanishi教授等人对苝微晶生长研究的实验结果,相对于原有模型新模型具有可以解释现有的全部实验结果和生长活化能物理意义明确的优点。
补充资料:奥氏氧化物
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