1) gate inverter
门反相器
2) inverse gate; invert gate; inverting gate
反相门
3) inverter
[英][in'və:tə] [美][ɪn'vɝtɚ]
反用换流器,变极器,反相器;"非"门
4) inverter
[英][in'və:tə] [美][ɪn'vɝtɚ]
反相器
1.
Based on I-V characteristics of single-electron transistor and the idea of MOS digital circuit design,an inverter using the single-electro and MOS transistors is proposed and some other logic gate circuits are educed.
基于单电子晶体管的I-V特性和MOS晶体管的逻辑电路设计思想,提出了1个单电子晶体管和MOS晶体管混合的反相器电路,进而推导出其它基本逻辑门电路,并最终实现了一个半加器电路。
2.
An analysis is made on the factors influencing the full swing output and high speed of the BiCMOS inverter,and based on this a full swing BiCMOS inverter with high speed and low consumption is designed.
通过分析影响双极互补金属氧化物半导体 (BiCMOS)反相器全摆幅输出和高速度的诸因素 ,设计了具有高速、低功耗、全摆幅输出的BiCMOS反相器 ,提出了采用先进的 0 。
3.
A new method for measuring curve of voltage transmission characteristics of bothTTL inverter and CMOS inverter is introduced.
介绍了测量ＴＴＬ反相器和ＣＭＯＳ反相器电压传输特性曲线的一种新方法。
5) TTL Inverter
TTL反相器
6) CMOS Inverter
CMOS反相器
1.
Application of PSpice9.2 in TTL and CMOS Inverter;
PSpice9.2在TTL和CMOS反相器中的应用
2.
A 3-bit low-power ADC core has been designed using CMOS inverter.
用CMOS反相器作比较器设计了一个3位的高速低功率flash ADC核。
3.
By simulation analysis of RF pulse disturbance effect on CMOS digital circuit components level,the process of disturbance even the turnover effect on output logic level of CMOS inverter is compared while injecting RF disturbance pulse with different frequency and power.
通过对CMOS数字电路器件及RF脉冲扰乱效应的模拟分析,比较了注入不同频率与功率的RF扰乱脉冲时对CMOS反相器输出逻辑电平扰乱甚至翻转的效应过程。
补充资料：无相无相解脱门
【无相无相解脱门】
（术语）重三解脱门之第二。(参见：三三昧)中重三昧。
（术语）重三解脱门之第二。(参见：三三昧)中重三昧。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条