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1)  magneticstrain
磁应变
2)  magnetic-field-induced strain
磁致应变
1.
The surface morphology,compositions and microstructures of the films were investigated and the magnetic-field-induced strain was measured.
采用直流磁控溅射的方法,在NaC l基底上沉积了N i-Mn-Ga薄膜,对薄膜进行了形貌观察、微区成分及结构分析,并测量了薄膜的磁致应变。
2.
The effects of microamount additions of RE(Tb, Sm) on the martensitic transition and the magnetic-field-induced strains of highly textured polycrystalline Ni-Mn-Ga alloys were investigated,and the effects of pre-compressive stress on the magnetic-field-induced strains of the alloys were studied especially.
研究了稀土元素Tb和Sm对Ni-Mn-Ga磁性形状记忆合金的马氏体相变及磁致应变的影响,并着重研究了预加压应力对合金磁致应变的影响作用。
3.
The martensitic transformation and the magnetic-field-induced strain (MFIS) of melt-spun ribbons were investigated.
采用快淬技术制备了非化学计量比的Ni47Mn32Ga21薄带合金,研究了快淬合金的形状记忆效应和磁致应变。
3)  Magnetorheological effect
磁流变效应
1.
An experimental study of planarization technique with instantaneous tiny grinding wheel cluster based on magnetorheological effect;
集群磁流变效应微磨头平面研抛加工参数研究
2.
Polishing properties of tiny grinding wheel based on magnetorheological effect
磁流变效应微磨头抛光特性研究
4)  MR effect
磁流变效应
1.
In this paper we prepared MR elastomers containing carbonyl iron particles based on silicon rubber without using magnetic fields during curing by γ-ray radiation and the corresponding MR effect and mechanica.
作者详细研究了制备过程中可能影响磁流变效应及力学性能的各种因素,特别是固化时间以及不同添加剂,包括增塑剂、增强剂的种类及其含量等的影响,以获得硅橡胶弹性体磁流变效应和力学性能的优化,并提出了各向同性的磁流变弹性体的作用机理。
2.
Then the MR effect of distributed chains as well as the overall MR effect were studied.
用局部场的方法计算了链的势能,引入了分布函数来描述链的分布,并分析了与磁场方向不一致的斜链的磁流变效应,进而通过积分叠加求得含有分布链的磁流变弹性体的磁流变效应。
5)  martensitic transition
磁诱导应变
1.
Both martensitic transition and Curie temperature were checked by AC susceptibility measurement.
用交流磁化率测定了合金的相变温度和居里温度,用动态电阻应变仪测试了合金在不同温度及不同磁场强度下的相变应变和磁诱导应变。
6)  magnetic field induced strain
磁感生应变
补充资料:磁致电阻


磁致电阻
Magnetoresistance

磁致电阻(magnetoresistanee 磁致电阻是对载流的导体或半导体加上磁场H时所产生的电阻变化。磁致电阻是磁场电效应的一种。它在磁场H平行于和垂直于电流时都可观察到。电阻的变化通常与H“成正比,但是在非常大的磁场中,它变成与H成正比。参阅“磁场电效应”(galvanomagnetie effeets)条。 在大多数金属中,电阻的变化是正的;然而,在贵金属和过渡金属的合金以及在饱和以上的铁磁体中,电阻的变化一般是负的。 在半导体中,磁致电阻非常大(特别在锑化姻中),并且相对于单晶体中电流的方向具有大的各向异性。后一性质对于确定带结构很有价值。对磁致电阻的测量还可提供有关载流子迁移率的知识。 仁亚伯拉罕斯(E.Abrahams)、凯弗(F·Keffer)撰]
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