2) complex capacitivity
复电容率，复介电常数
3) complex permittivity
复介质常数，复介电系数，复电容率
4) the complex capacitance
复电容
1.
The influence of sintering temperature on the depression angle of the complex capacitance curves was studied, the types and origin of traps in grain boundary of low voltage ZnO ceramic varistors were also discussed.
应用HP4192A低频阻抗分析仪测量了低压ZnO压敏陶瓷的复电容曲线 ,研究了烧结温度对复电容曲线压低角的影响规律 ,探讨了晶粒边界耗尽层中电子陷阱的种类和起因 ,并对电子陷阱的特征参数进行了表征 。
5) complex capacitance
复数电容
1.
The expressions of complex capacitance for ideal polarized electrodes and kinetic ontrolled electrodes were deduced.
推导了电化学体系中理想极化电极、电化学极化电极的复数电容表达式。
2.
The exprassions of complex capacitance for ideal polarized electrodes,kinetic controlled electrodes,and both kinetic and mass transfer controlled electrodes,were deduced.
用复数电容的概念推导了电化学体系中理想极化电极、电化学极化电极及兼有电化学极化和浓差极化电极的复数电容表达式。
3.
The impedance spectroscopy of the asymmetric supercapacitor before and after the activation process was studied in terms of complex capacitance and complex power,and the relaxation time constant was determined.
通过对化成前后的超级电容器交流阻抗谱进行分析,利用复数电容和复数功率两种形式讨论了不对称超级电容器的阻抗变化规律,确定了不对称超级电容器的时间常数;通过碳/碳超级电容器与不对称超级电容器的阻抗行为的比较,说明电池型电极的引入对电容器的频率响应特性造成的影响。
6) reset capacitor
复位电容
1.
The effect of the reset capacitor in the AC small signal of active clamp forward converter is analysed first,then considering the rds(on),the article deduces the non-ideal small signal based on the state-space average method,in the end the characteristics of this new model is verified by simulation.
文中分析了有源箝位正激变换器中复位电容对其小信号特性的影响,在考虑原边主管导通电阻的基础上,应用状态空间平均法,首次推导其小信号模型,并运用Mathcad仿真了该模型的频率特性,结合控制理论根之和的概念,分析了非理想条件下的有源箝位正激电路的小信号模型。
补充资料：复电容率
复电容率
complex permittivity
f日曲。门厂。ngl山复电容率(complex permittivity)能同时反映电介质在交变电场中极化与损耗特性的物理量。由于介质损耗的存在，正弦交变电场作用时，通过介质的电流包含一个大的容性电流(其电流密度为j。￡E，。为电场角频率，。是介质电容率，E为电场强度)和一个小的阻性电流(其电流密度表示为。刃，。为等值电导率;E为电场强度)，总电流密度J可以表示为 一J一(ja，绍+减)对照理想介质的电容电流密度表示式 Jc~j‘绍定义复数 二.叮).即￡一E一3一一‘一厂 (口为复电容率，其实部即是介质的电容率，虚部砂可表示介质损耗的大小。虚部与实部之比砂/己正好是介质损耗角正切‘ga。复电容率的实部和虚部都是温度和频率的函数。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条