1) low-pressure chemical vapor deposition(LPCVD)
低压化学汽相沉积
2) atmospheric pressure chemical vapor deposition
常压化学汽相沉积
1.
This paper reports some investigation results about nanometer TiO x optical thin film prepared by atmospheric pressure chemical vapor deposition(APCVD),the influence of temperature on structure and refractive index of TiO x is discussed.
报道了用常压化学汽相沉积 (APCVD)工艺制备TiOx 纳米光学薄膜的研究结果 ,讨论了衬底温度对薄膜结构及折射率的影响 ,实验验证了太阳电池对光学减反射膜的理论要求 ,优化了工艺条件 ,制备的TiOx 纳米光学薄膜性能稳定 ,大面积颜色均匀一致。
2.
This paper reports some investigation results of nanometer TiOx optical thin film prepared by atmospheric pressure chemical vapor deposition(APCVD),analyzes the influence of temperature on constructure and refractive index of TiOx,the antireflection characteristics of TiOx deposited on polished wafers and textured wafers are dicussed,the optimal process is proposed.
报道用常压化学汽相沉积 (APCVD)工艺制备 Ti Ox纳米光学薄膜的研究结果 ,分析衬底温度对薄膜结构及折射率的影响 ,讨论在抛光硅片及绒面硅片上制备的 Ti Ox薄膜光学减反射特性 ,并优化了工艺条
3) chemical vapour deposition / piezoresistive effect
化学汽相沉积/压阻效应
4) high-pressure chemical vapor deposition(HPCVD)
高压化学汽相沉积
5) low pressure chemical vapor deposition
低压化学气相沉积
1.
Boron doped carbon(BCx)thin film was prepared at 1 100 ℃ on carbon fiber substrate by low pressure chemical vapor deposition(LPCVD)from BCl3 and C3H6 as boron and carbon sources respectively.
以 BCl3和 C3H6分别作为低压化学气相沉积制备掺硼碳材料的硼源和碳源,采用热壁化学气相沉积炉,于 1 100 ℃在碳纤维基底上制备了掺硼碳薄膜。
2.
Ge nanowires are synthesized by low pressure chemical vapor deposition (LPCVD) combined with porous alumina template.
采用氧化铝模板法结合具有高真空背景的低压化学气相沉积技术制备出 Ge纳米线 。
6) low-pressure chemical vapor deposition
低压化学气相沉积
1.
Synthesize single-wall carbon namotubes by low-pressure chemical vapor deposition method;
低压化学气相沉积法制备单壁碳纳米管
2.
We report a novel method for obtaining high-density Ge-dots/Si multilayered structures by combining low-pressure chemical vapor deposition and metal-induced lateral crystallization.
研究了利用低压化学气相沉积(LPCVD)和金属诱导横向结晶技术制备高密度Ge/Si量子点多层异质结构。
3.
In this paper,we use low-pressure chemical vapor deposition system to synthesize highly vertically aligned CNTs and non-aligned CNTs respectively,and apply them successfully in super-capacitors,field-emission cathode,as well as biological sensors.
本论文利用低压化学气相沉积系统,分别以酞菁铁和乙炔为碳源制备出了高度定向与非定向的多壁碳纳米管,并将其成功应用于超级电容器和场发射阴极以及生物传感器中,在碳纳米管的应用方面作了初步的尝试。
补充资料：等离子化学气相沉积
分子式：
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条