1) lateral high voltage devices
横向高压器件
1.
Purpose of the work is to propose a new device structure which suppresses parasitic latch-up effectively and also improves a turn-off characteristic by cascading of lateral high voltage devices LDMOS and LIGBT together without any considerable sacrifices of forward characteristic.
本文针对横向高压器件LDMOS和LIGBT的串联结构特性以及其原理进行了分析和仿真。
2) lateral high-voltage DMOS
横向高压DMOS
1.
Based on the transport mechanism of the single ion radiate plasma, the transient response model of single ion radiate the lateral high-voltage DMOSis proposed.
基于单粒子辐照的等离子体输运机理,提出了横向高压DMOS单粒子辐照的瞬态响应模型。
3) high-voltage device
高压器件
1.
A novel self-bias high-voltage device structure for the start-up circuit of an off-line switching model power supply IC is described.
设计了一种新的用于离线式集成开关电源启动电路的自偏置高压器件结构。
5) lateral resonant device
横向谐振器件
6) invister
横向扩散器件
补充资料：高压线走廊（高压架空线路走廊）
在计算导线最大风偏和安全距离情况下，35kV及以上高压架空电力线路两边导线向外侧延伸一定距离所形成的两条平行线之间的专用通道。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条