1) InGaN-based blue-LED
InGaN基蓝光LED
3) Blue LED
蓝光LED
1.
We transfer GaN based LED epitaxial materials grown on a Si substrate to a new Si substrate and fabricate flip blue LED chips.
在Si衬底上生长了GaN基LED外延材料,将其转移到新的硅基板上,制备了垂直结构蓝光LED芯片。
2.
High-power blue light -e mitting diodes were fabricated with the blue LED chips as primary light source,a nd high-power white LEDs were fabricated by phosphor conversion.
以GaN基蓝光LED芯片为基础光源制备了大功率蓝光LED,并通过荧光粉转换的方法制备了白光LED。
3.
This paper introduces briefly the material characteristics of GaN, the reason GaN is suitable for blue LEDs and the typical devices which have been invented.
介绍了GaN材料的基本特性、GaN材料适于做蓝光LED的优势以及具有典型代表意义的GaN基LED器件,讨论了该领域国际最新研究出的蓝光LED和工作原理;从其发展进程中不难看出,改变器件结构、提高材料质量或采用新型材料使GaN基蓝光LED的光谱质量和量子效率有了本质提高。
4) blue-violet LEDs
蓝紫光LED
1.
A series of blue-violet LEDs with InGaN/GaN multi-quantum-wells(MQWs) structure were grown by low-pressure metalorganic chemical vapor deposition(LP-MOCVD).
利用低压MOCVD系统,在蓝宝石衬底上外延生长了InGaN/GaN多量子阱蓝紫光LED结构材料。
5) InGaN laser diodes
InGaN激光器
1.
Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model.
利用含时二维热传导模型分析了蓝宝石衬底上生长、制作的脊形InGaN激光器内波导层的温度分布和时间演化规律。
6) GaN-based white LEDs
GaN基白光LED
1.
In this paper,the current accelerated aging experiment on three groups of GaN-based white LEDs produced on the Al2O3 substrate have been performed at 30 mA、50 mA and 70 mA.
随着老化电流的增大,GaN基白光LED的光输出功率随时间的衰减速率相对较快;随老化时间的加长,30 mA电流驱动下,GaN基白光LED相对光谱中黄光比重先增加再减小。
2.
According to the results,the best rated operating current of GaN-based white LEDs is discussed.
实验研究了恒流驱动条件下,GaN基白光LED的正向电压、发光光谱和发光效率随环境温度的变化情况。
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条