1) 1/f noise model
1/f噪声模型
1.
A 1/f noise model of radiation damage in BJTs is proposed, based on the damage mechanisms of the interface material and the microscopic analysis of defects generation in BJTs, as well as the relationships between defects and parameters available, i.
在双极晶体管界面材料辐照损伤机理及缺陷产生微观机制分析的基础上,结合缺陷与电参量及1/f噪声参量之间的关系,建立了辐照损伤的1/f噪声模型。
2) unified 1/ f noise model
统一的1/f噪声模型
3) 1/f noise
1/f噪声
1.
The effect of ~(60)Co γ ray irradiation on the 1/f noise of Schottky barrier diodes;
~(60)Co γ射线辐照对肖特基二极管1/f噪声的影响
2.
Investigation on 1/f noise peak and its mechanism of laser diodes;
激光二极管1/f噪声峰及其产生机理的研究
3.
Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise;
基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管辐照退化模型
4) 1/f fractal noise
1/f分形噪声
1.
A multiscale adaptive Wiener filter based on wavelet is proposed for signal restoration embedded in 1/f fractal noise.
针对淹没在1/f分形噪声中的有用信号恢复问题,提出了一种基于小波变换与Wiener滤波的多尺度自适应滤波算法。
6) 1/f noise corner
1/f噪声转角
补充资料：[3-(aminosulfonyl)-4-chloro-N-(2.3-dihydro-2-methyl-1H-indol-1-yl)benzamide]
分子式：C16H16ClN3O3S
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
分子量：365.5
CAS号：26807-65-8
性质：暂无
制备方法：暂无
用途：用于轻、中度原发性高血压。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条