2) Noise enhancement

噪声增强
4) field enhancement

场增强
1.
A numerical model is described wherein a probe is modeled using a silver (Ag) particle and the substrate of the sample is modeled using an Ag thin film, in order to compute the near-field enhancement under the excitation of a p-polarized evanescent wave.
我们模拟了这种模型在p极化的隐失波的照射下,其热点处的场增强。
5) field-enhanced

电场增强
1.
AbstractUsing the 3-dimensional model on the carrier emission proposed by Ieda et al, the field-enhanced carrier generation is analyzed and the theoretical relationship between generation current and generation width based on the model is proposed.
采用Ieda提出的载流子发射的三维模型,研究了半导体中载流子的电场增强产生现象,推导出基于三维模型的产生区电流与产生区宽度的理论关系,并用于解释有关的实验结果。
补充资料:X线量子噪声
X线量子噪声
影像学术语。X线量子依泊松(Polsson)分布的统计学法则随机产生的空间波动。噪声量与X线检测器检测到的X线量成反比。因此,相应地与入射的X线量成反比。即是说,入射的(检测到的)X线量越大,X线量子噪声越小。噪声量通常以均值平方根(root mean square,RMS)表示。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条