Then the recent progress of semiconductor microelectronic and optoelectronic materials including silicon,GaAs and InP crystals and its microstructures,wide band gap semiconductors materials,spintronic materials and organic semiconductor optoelectronic materials as well for national inside and outside are reviewed respectively.

Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy;

Optimal preparation of arbitrary quantum state of electron spins quantum-bit system based on invariant magnetic field;

Based on a magnetic field controlled electron spin quantum system,utilizing the mechanism of realizing the unitary evolution of the quantum state through the quantum gate,an optimal control strategy to prepare an arbitrary quantum state is proposed.

Applications of copper plating technology to electronic materials;

This paper reviews the development from the electronic materials to the optolectromc and photonic materials with respect to the progress of information technology (IT).

They are modern analysis instrument and technology,electronic materials and devices,and thin film physics and technology.

Since the current voltage characteristics of the threshold memory switch in chalcogenides have been observed by Ovshinsky at 1968, especially both n type and p type doping for hydrogenated amorphous silicon have been avaliable, as one kind of important electronic materials amorphous semiconductors in both fundamental research and application were remarkably developed over the past 30 years.