1.
Progress in the Developments of DSM IC Technology in the 21~(st) Century
21世纪深亚微米芯片技术的新进展
2.
The Study on the Hot-Carrier Effect in Deep Sub-Micron MOSFET;
深亚微米MOS器件热载流子效应研究
3.
Characteristics Research of Ultra-Deep-Submicron SOI SiGe MOSFETs;
超深亚微米SiGe SOI MOSFETs的特性研究
4.
The High Temperature Application Research of Deep Sub Micron SOI CMOS Circuits;
深亚微米全耗尽SOI CMOS的高温应用分析
5.
Research on NBTI in Ultra Deep Sub Micron PMOSFET Device;
超深亚微米PMOSFET器件NBTI研究
6.
Research on Library Building of VDSM Memory;
深亚微米工艺下的Memory建库技术研究
7.
Research on the IP Design Methodology Based on the DSM Technology;
基于深亚微米工艺的IP设计技术研究
8.
Research on Timing Modeling of VDSM IC Cells;
深亚微米工艺下的单元时序建模研究
9.
Study on the Structure and Reliability of Deep Submicrion SDE MOSFET;
深亚微米SDE MOS器件结构及可靠性研究
10.
A Research on RTS Noise in Ultra Deep Submicron MOS Devices;
超深亚微米MOS器件RTS噪声研究
11.
Very Deep Submicron GHz CAM Full Custom Design
深亚微米GHz级CAM全定制设计
12.
Research on Hot-carrier Effects for Deep-submicron LDD MOSFET
深亚微米LDD MOSFET器件热载流子效应研究
13.
Study of Parameters Limiting ESD Performance in Deep Submicron process
深亚微米工艺ESD电路设计参数研究
14.
2-D Current Model of Fully Depleted SOI BJMOSFET
深亚微米全耗尽SOI BJMOSFET的二维电流模型
15.
Study on SEE characteristic and hardening techniques of CMOS SRAM with sub-micro feature sizes
深亚微米CMOS SRAM SEE特性及加固技术研究
16.
Whole-Chip ESD Protection Design for Deep Submicron Mix-Signal CMOS VLSI
深亚微米混合信号全芯片ESD电路设计
17.
Designing Deep Submicron RF CMOS LCVCO with VPCM
利用VPCM设计深亚微米RF CMOS的LCVCO
18.
Static Timing Analysis Used in Deep Submicron ASIC Design
深亚微米ASIC设计中的静态时序分析