1.
A Calculation of the Base Diverging Resistance of Triode Magnifying Circuits;

三极管放大电路基极偏置电阻的估算
2.
Simulation of Self-Base Bias Effect of Class C Power Amplifier Using Multisim

丙类功率放大器基极自给偏置效应的Multisim仿真
3.
The relation of stress time to parameter degradation is investigated under the condition of reverse bias of base-emitter junction.
在基极-发射极反向偏置的条件下,研究了应力作用时间与器件参数的退化关系。
4.
According to the electrode orbiting patterns, the scattered meshes were non-uniformly offset.
根据电极不同的摇动方式,非均匀偏置离散网格。
5.
Study on Spatial Instantaneous Polarization Characteristics of Offset Paraboloid Reflector Antenna and Simulation Analysis
偏置抛物面天线的空域瞬态极化特性及仿真分析
6.
Poly(vinylidene chloride)-based carbon as an electrode material for high power electric double layer capacitors
聚偏二氯乙烯基炭用作高功率EDLC电极材料
7.
Multi-objective Particle Swarm Optimization Based on Bipolar Preferences Control

基于双极偏好控制的多目标粒子群优化算法
8.
Integral Design for North Finder Controller Based on Offset Current;

基于偏置电流的寻北仪控制系统一体化设计
9.
Disposition Research Based on Superintendent s Multi-dimensional Individuality Preference;
基于多维个性偏好的管理者优化配置研究
10.
Design of Capital Compoundation for Life Insurance Fand with Risking Preferation;

有风险偏好系数的寿险基金资产配置模型设计
11.
Optimization of momentum-biased wheel rotor based on its static and dynamic properties

基于静动态特性的偏置动量轮轮体结构优化
12.
Electrode Orbiting Compensation in EDM Based on Generalized Offset of Tool Path

基于刀轨广义偏置的电火花摇动加工补偿方法
13.
Feature-point classification based on position changes of correspondences

基于同名像点位置偏差的特征点分类方法
14.
Analysis of Sampling Period Based on Pole Placement

基于极点配置的采样周期分析(英文)
15.
Dual-loop Control Scheme of Inverter Based on Pole Assignment

基于极点配置的逆变器双环控制方案
16.
Limits and fits--Bases--Part 3: Numerical values tables of standard tolerances and fundamental deviations
GB/T1800.3-1998极限与配合基础第3部分:标准公差和基本偏差数值表
17.
" Limits and fits--Bases--Part 2: Basic rules of tolerances,deviations and fits"

GB/T1800.2-1998极限与配合基础第2部分:公差、偏差和配合的基本规定
18.
Asymmetrical Doherty for 3G Base Stations Based on Dedicated Transistors including Integrated Bias
面向3G基站的基于专用晶体管(带综合偏置)的非对称Doherty技术