1.
Parameter Extraction Methods for Modelling HBT and Researches on InP-Based Monolithic Integrated Device;
HBT模型参数提取方法及InP基单片集成器件的研究
2.
Static Simulation of Novel InP/InGaAs Double Heterojunction Bipolar Transistor;
新型InP/InGaAs材料双异质结HBT的静态模拟
3.
Research of DC Parameter-Extraction on InP-Based HBT GP Large-Signal Model
InP基HBT GP大信号模型直流参数提取的研究
4.
Modeling and Simulation technique Research of SiGe HBT;
SiGe HBT建模及模拟技术研究
5.
High Frequency Gain Block Based on SiGe HBT;
基于SiGe HBT的高频增益模块
6.
Performance Analysis and Modelling and Simulation of SiGeC HBT
SiGeC HBT特性分析与建模仿真
7.
The GP (Gummel-Poon) Modeling of HBTs and the Design of OEIC Photoreceiver Front-End
HBT的GP建模及OEIC接收机前端的设计
8.
Numerical Simulation and Analysis of SiGe HBT’s Characteristic Parameters
SiGe HBT器件特征参数的数值模拟与分析
9.
Simulation, Design and Fabrication of GaAs-based Heterostructure Bipolar Transistor;
GaAs基异质结双极晶体管（HBT）的模拟、设计与制作
10.
Fabrication and Reseach of Four Sorts of Novel Three-terminal NDR Devices Compatible with HBT Process;
与HBT工艺兼容的四类新型三端负阻器件的研制与研究
11.
Study on InGaP/GaAs Microwave HBT and VCO;
InGaP/GaAs微波HBT器件及VCO电路的研究
12.
The Study of High Frequency SiGe Heterojunction Bipolar Transistors (HBT) Low-noise Amplifier;
高频SiGe HBT低噪声放大器的研究
13.
Simulation of a Novel Structure Microwave Power SiGe HBT;
新结构微波功率SiGe HBT的仿真研究
14.
SiGe Heterojunction Bipolar Transistor (SiGe HBT) Research and Design;
SiGe异质结双极晶体管（SiGe HBT）研究与设计
15.
Growth Technology of SiGe HBT Base Layer by Using BiCMOS Process
一种采用BiCMOS工艺的SiGe HBT基区生长方法
16.
Effects of Electron Temperature Distribution on Base Transit Time of SiGe HBT
电子温度对SiGe HBT基区渡越时间的影响
17.
Development and Application of InP HEMT and InP HBT
国外InP HEMT和InP HBT的发展现状及应用
18.
Design of SiGe HBT LNA Considering Group Delay and Wideband Matching
兼顾群延时与宽带匹配的SiGe HBT LNA设计