1.
Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells
量子限制效应对δ掺杂GaAs/AlAs多量子阱中铍受主态寿命的影响
2.
Study on Irradiation Effects of GaAs/AlGaAs Multiple Quantum Wells;
GaAs/AlGaAs多量子阱材料的辐照效应研究
3.
Study on Photoluminescence Spectrum of Quantum Well Infrared Photodetector Epitaxy Structure
GaAs/AlGaAs多量子阱红外探测器外延材料PL谱研究
4.
Multi-quantum-well InGaNAs/GaAs one mirror inclined three-mirror cavity photodetector operating at 1.3 μm
1.3μm InGaNAs/GaAs多量子阱“一镜斜置三镜腔”光探测器
5.
Study on InGaAs/GaAs Strained Quantum well Lasers;
InGaAs/GaAs应变量子阱半导体激光器的研究
6.
Characterization and Growth of 1.2μm Highly Strained InGaAs/GaAs Quantum Well;
1.2μm InGaAs/GaAs高应变量子阱材料的生长及特性研究
7.
Study and Improvement of Novel GaAs/AlGaAs Quantum Well Middle and Long Wavelength Infrared Photodetectors;
新型GaAs/AlGaAs量子阱中远红外探测器的研究与改进
8.
Monte Carlo Study on Electrons Transport of Terahertz GaAs/AlGaAs Quantum-well Detectors
太赫兹波段GaAs/AlGaAs量子阱探测器电子输运特性的蒙特卡洛模拟
9.
Pressure Effect on the Binding Energies of Excitons in Symmetrically Coupled Double Quantum Wells of GaAs/Al_xGa_(1-x)As
GaAs/Al_xGa_(1-x)As对称耦合双量子阱中激子结合能的压力效应
10.
Study of electron spin diffusion transport in intrinsic GaAs quantum wells by time-and space-resolved absorbtion spectroscopy
本征GaAs量子阱中电子自旋扩散输运的时-空分辨吸收光谱研究
11.
MQW semiconductor laser
多量子阱半导体激光器
12.
Study of InAs/GaAs Quantum Dots
InAs/GaAs系列量子点研究
13.
Investigation on Passive Mode-Locking in an Nd:YAG Laser Using Multi-Quantum-Well InGaAsP
多量子阱InGaAsP实现Nd:YAG激光器被动锁模
14.
Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes
GaN基激光器多量子阱垒材料的研究
15.
Quantum well infrared photodetector material with photoluminescence measurement
多量子阱红外探测材料的光致荧光谱
16.
An Investigation on InGaAs/InAlAs Multiple Quantum Well Multi Mode Interference Optical Splitters/Couplers;
InGaAs/InAlAs多量子阱多模干涉光分路器/耦合器研究
17.
A Study of Multiple Quantum Wells for All-Optical Switching on Spin Electronics;
用于电子自旋光开关的多量子阱材料研究
18.
Research on the Electronic Properties of InAlGaN Multiple Quantum Well Structures;
InAlGaN材料系多量子阱结构电子学特性的研究