1.
Growth of 3C-SiC Buffer and SiCGe Film on 6H-SiC;
6H-SiC上3C-SiC缓冲层及SiCGe薄膜的生长
2.
Effects of a Buffer Layer on the Hetero-epi-growth of SiCGe on 6H-SiC;
3C-SiC缓冲层对在6H-SiC上生长SiCGe的影响
3.
Investigation the Mechanism of Ni Based Ohmic Contacts to SiC;
Nickel/6H-SiC欧姆接触机理研究
4.
Studies of the Property of Interface on SiO_2/6H-SiC and the Defects in SiO_2;
SiO_2/6H-SiC界面特性及其氧化层缺陷研究
5.
Study of the Growth Characteristics of P-SiCGe Layers Grown on 6H-SiC Substrates;
6H-SiC衬底上生长p-SiCGe薄膜的研究
6.
Infrared Spectra Study of the Electrical Properties of 6H-SiC;
6H-SiC单晶电参数的红外光谱研究
7.
A Study of 6H-SiC Heterojunction Source/Drain MOSFET;
6H-SiC异质结源漏MOSFET的研究
8.
Study of the SiO_2 Film by Thermal Oxidation on 6H-SiC;
6H-SiC表面热氧化生长的SiO_2特性研究
9.
Studies on Metal-Semiconductor Contacts of 6H-SiC and Some Interrelated Processes;
n型6H-SiC金半接触及相关工艺研究
10.
Studies of Characteristics of 6H-Sic Schottky Diodes;
6H-SiC肖特基二极管的特性研究
11.
Pinning Effect of the Neutron-irradiated 6H-SiC Crystals
中子辐照6H-SiC晶体中的钉扎效应
12.
Low-Temperature-Dependent Raman Study on A_1(LO) Mode of 6H-SiC
6H-SiC的A_1(LO)拉曼峰低温温度特性研究
13.
Effect of hydrofluoric acid etching time on Ni/6H-SiC contacts
氢氟酸刻蚀对Ni/6H-SiC接触性质的作用
14.
EFFECT OF NEUTRON-IRRADIATION ON SPECIFIC HEAT CAPACITY OF 6H-SiC CRYSTAL
中子辐照对6H-SiC晶体比热容的影响
15.
Research Progress in Irradiation Effects of 6H-SiC Materials and Devices
6H-SiC材料与器件辐照效应的研究进展
16.
Study on Analytic Model of C-V Relationship of 6H-SiC Buried-Channel MOSFET
6H-SiC埋沟MOSFET的C-V解析模型研究
17.
Analysis on Surface Morphology and Defect Generation at the Initial Stages of 6H-SiC Sublimation Growth
6H-SiC成核表面形貌与缺陷产生的研究
18.
C-V characteristics of 6H-SiC buried-channel MOSFET
6H-SiC埋沟MOSFET的C-V特性研究