1.
Photoluminescence Spectra of CdSe/ZnS-Quantum Dot Doped Fiber with High Doping Concentrations
较高掺杂浓度下CdSe/ZnS量子点光纤光致荧光光谱
2.
A Study on Preparation and Properties of Highly Doped Mn: MgAl_2O_4 Transparent Ceramics;
高掺杂浓度的掺锰铝酸镁透明陶瓷的制备及其物性研究
3.
Investigation on Microstructure and Electrical Properties of Sm_2O_3-doped Bismuth Titanate Ceramics
高浓度Sm_2O_3掺杂的BIT陶瓷微结构与电性能研究
4.
Emission of BaMgAl_(10)O_(17):Eu~(2+) with High Concentration of Activator
高浓度激活剂掺杂钡镁铝酸盐的发光特性研究
5.
Microstructure and Spectral Property of Er~(3+) Doped Transparent Oxyfluoride Glass Ceramics with High Fluorine Contents
Er~(3+)掺杂高氟浓度透明氟氧化物玻璃陶瓷的微观结构和光谱性质
6.
With increasing doping concentration, the impact of neutral impurity scattering becomes more significant.
随着掺杂浓度的增加,中性杂质散射作用增强.
7.
Practice for conversion between resistivity and dopant density for boron-doped and phosphorus-doped silicon
GB/T13389-1992掺硼掺磷硅单晶电阻率与掺杂剂浓度换算规程
8.
On Effect of Acetic Acid on Calcium and Manganese Doping Ba_xSr_(1-x)TiO_3;
醋酸浓度对钙锰掺杂Ba_xSr_(1-x)TiO_3的影响研究
9.
Photoluminescence of CdS/SiO_2 Core-Shell Nanostructures with Different Manganese Concentration
不同掺杂浓度的CdS:Mn/SiO_2核壳纳米结构的光致发光
10.
Effects of boron doping on carrier concentration of diamond film
硼掺杂对金刚石薄膜载流子浓度的影响
11.
Spectral of Yb:YAB Single Crystal with Different Yb~(3+) Concentration
不同掺杂浓度Yb~(3+):YAl_3(BO_3)_4晶体光谱研究
12.
Influence of Mn Ion Doping Concentration on Electronic Structure and Optical Properties of Mn:MgAl_2O_4
Mn掺杂浓度对Mn:MgAl_2O_4电子结构和光学性质的影响
13.
Concentration dependence of luminescence of Tb~(3+)-doped silicate glasses
Tb~(3+)掺杂硅酸盐玻璃发光性能的浓度依赖关系
14.
Influence of Doping Concentration on ZnS:Cu Optical Thin Films Prepared by Electrodeposition
掺杂浓度对电沉积法制备ZnS:Cu光学薄膜影响
15.
Novel Method for Calculating Base Doping Concentration of Field Stop IGBT
场终止型IGBT基区掺杂浓度计算的新方法
16.
Influence of Doping Concentration on Gauge Factor and Linearity of Polysilicon Nanofilms
掺杂浓度对多晶硅纳米薄膜应变系数及其线性度的影响
17.
Enhancement of Critical Current Density in MgB_2 Bulk Superconductors by Chemical Doping;
高临界电流密度的MgB_2块材的掺杂研究
18.
Enhancement of Critical Current Density in MgB_2 Bulk Superconductors by Chemical Doping
高临界电流密度的MgB_2块材掺杂研究