1.
Study of Impurities and Defects in Germanium Doped Czochralski Silicon for Photovoltaic Applications;
掺锗直拉硅中的杂质缺陷及其光伏应用研究
2.
Oxygen Precipitation Behaviors in Conventional and Nitrogen-codoped Heavily Arsenic-doped Czochralski Silicon;
普通和掺氮的重掺砷直拉硅单晶的氧沉淀行为
3.
Application of Nitrogen-doped Czochralski Silicon in Solar Cell;
掺氮直拉单晶硅在太阳电池中的应用
4.
Study on Temperature Characteristics for Germanium-doped Fiber Bragg Gratings;
掺锗光纤布拉格光栅温度特性的实验研究
5.
Investigation of Oxygen Precipitate and Induced-Defects in Fast Neutron Irradiated Nitrogen-Doped Czochralski Silicon;
快中子辐照掺氮直拉硅中氧沉淀及诱生缺陷研究
6.
Test method for resistivity of silicon and germanium bars using a two-point probe
GB/T1551-1995硅、锗单晶电阻率测定直流两探针法
7.
Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array
GB/T1552-1995硅、锗单晶电阻率测定直排四探针法
8.
Thermal Conductivity and Tensile Properties of BN,SiC and Ge Nanotubes
氮化硼,碳化硅和锗纳米管的导热与拉伸力学特性研究
9.
Microdefects and Defect Engineering of Iso-group Elements Doped Czochralski Silicon Used for Large-scale Integrated Circuits;
大规模集成电路用同族元素掺杂直拉硅单晶的微缺陷及其缺陷工程
10.
germanium-doped silica core single mode fiber
掺锗石英心单模光纤
11.
germanium-doped silica core multimode fiber
掺锗石英心多模光纤
12.
The Study of Photics Character and Distribution Homogeneity of Ge in Ge-Doped CZSi Bulk Single Crystal;
掺锗CZSi单晶光学性质及锗分布均匀性的研究
13.
We made the Czochralski silicon single crystal with a diameter of 12 inches.
直径12英寸直拉单晶硅研制成功。
14.
Selectively Grown SiGe and Metal-Induced Growth of Poly-SiGe Based on UHVCVD;
基于UHVCVD的选择性外延锗硅与金属诱导生长多晶锗硅的研究
15.
Research on Nonlinear Property of Erbium Doped PCF and Germanium Doped PCF
掺铒及掺锗光子晶体光纤非线性的研究
16.
The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches
8英寸直拉硅单晶抛光片
17.
Investigation of Oxygen Precipitation and Internal Gettering in Czochralski Silicon;
直拉硅单晶的氧沉淀及内吸杂的研究
18.
Investigation on Rapid Thermal Processing of Czochralski-grown (CZ) Silicon;
直拉硅单晶的快速热处理（RTP）研究