1.
In the next generation of optical disk system,GaN laser and high numerical aperture(NA)objective lens are two key components.
对于下一代光盘系统而言,GaN激光器和高数值孔径(NA)的物镜是关键组件。
2.
p-GaN Ohmic Contacts for GaN-Based Laser Diodes;
GaN基激光器p-GaN欧姆接触的研究
3.
Research on Laser Lift-off of GaN LED Thin Films
GaN LED器件外延膜的激光剥离的研究
4.
Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes
GaN基激光器多量子阱垒材料的研究
5.
Effect of Al Composition on the Properties of GaN-based Quantum Cascade Laser
Al组分对AlGaN/GaN量子级联激光器性能的影响
6.
STUDY OF Al COMPOSITION IN BARRIER OF GaN-BASED QUANTUM CASCADE LASER
GaN基三阱量子级联激光器结构的垒层Al组分分析
7.
Phosphors and Devices in Application of GaN-based Power WLEDs;
大功率GaN基白光LED荧光材料与器件
8.
Micro Etching of GaN-Based Semiconductor Materials Using 157nm Laser
GaN基半导体材料的157nm激光微刻蚀
9.
Vertical GaN light-emitting diodes fabricated by laser lift-off technique
激光剥离技术实现垂直结构GaN基LED
10.
Similarities and Differences Between Negative Electron Affinity GaN and GaAs Photocathode Activation Mechanisms
NEA GaN和GaAs光电阴极激活机理对比研究
11.
Device Properties Study of Blue GaN LED on Si Substrates;
Si衬底GaN基蓝光LED器件性能研究
12.
Pulsed Laser Deposited GaN Film and the Effect of ZnO Buffer Layer;
脉冲激光沉积GaN薄膜及ZnO缓冲层的影响
13.
Activation mechanism of negative electron affinity GaN photocathode
负电子亲和势GaN光电阴极激活机理研究
14.
Correlation of the Yellow Photoluminescence and Excitation Sources of GaN Film Grown by MOVPE
MOVPE生长GaN薄膜的光致黄带发光与激发光源的相关性
15.
Effects of Electron Irradiation on n-GaN UV Detector;
n-GaN肖特基紫外光探测器的电子辐照效应
16.
The Research and Fabrication of GaN-based Materials and MSM UV-Photodetectors;
GaN材料及MSM结构紫外光电探测器的研究与制备
17.
dual laser
【光】双波长激光器
18.
Pulsed Laser Deposited GaN Film on Different Substrates;
用脉冲激光沉积工艺在不同衬底上生长GaN薄膜的研究