1.
					
							The address of storage location in real storage.
						
					
					
						
						
					
					
						在实存(储器)中的某个实际存储单元的地址。
					2.
					
							A description of the contents of actual memory location.
						
					
					
						
						
					
					
						一种对实际存储器单元内容的描述。
					3.
					
							memory location register
						
					
					
						
						
					
					
						存储(单元)寄存器
					4.
					
							one transistor memory
						
					
					
						
						
					
					
						单晶体管单元存储器
					5.
					
							garbage collection
						
					
					
						
						
					
					
						无用存储单元收集法
					6.
					
							A storage cell in some amorphous memory devices.
						
					
					
						
						
					
					
						某些非晶体存储器中的一个存储单元。
					7.
					
							The fundamental storage unit in the C++ memory model is the byte.
						
					
					
						
						
					
					
						存储模型的基本存储单元是字节。
					8.
					
							The address of a storage location in virtual storage.
						
					
					
						
						
					
					
						虚拟存储器中存储单元的地址。
					9.
					
							general register unit
						
					
					
						
						
					
					
						通用寄存器单元-用以存储微程序的暂时存储区
					10.
					
							A basic unit of storage in a computer memory that can hold one unit of information, such as a character or word.
						
						
						基本存储单元,单元计算机内存中能够储有一个单位的信息,比如一个字符或字的基本存储单元
					11.
					
							A storage cell ; an element of data storage that can hold one bit.
						
					
					
						
						
					
					
						一个存储单元;保存一位二进制数的数据存储单元。
					12.
					
							storage allocation
						
					
					
						
						
					
					
						存储单元;存储分配;存储器分配;分配内存;库容分配
					13.
					
							addressable register
						
					
					
						
						
					
					
						可编址寄存器 -一种暂时存储单元
					14.
					
							single aluminum memory cell
						
					
					
						
						
					
					
						单层铝金属化式存储单元
					15.
					
							One or more storage elements, considered as a unit.
						
					
					
						
						
					
					
						看作是一个存储单位的一个或多个存储元件。
					16.
					
							Memory Cell Design and Key Fabrication Technology for Phase Change Memory;
						
					
					
						
						
					
					
						相变存储器存储单元设计与关键制备工艺
					17.
					
							Memory-storing approach for storing one character in each addressable location.
						
					
					
						
						
					
					
						在每个可编址单元存储一个字符的存储器存储方法。
					18.
					
							The generation mechanism of stress induced leakage current( SILC) in flash memory cell is studied by experiments.
						
						
						通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理.