1.
Study on AlGaN/GaN MOS-HEMT's Characteristics
AlGaN/GaN MOS-HEMT器件特性研究
2.
Temperature characteristics of AlGaN/GaN MOS-HEMT with Al_2O_3 gate dielectric
Al_2O_3绝缘栅AlGaN/GaN MOS-HEMT器件温度特性研究
3.
High Performance 0.18 μm T-gate GaAs Metamorphic HEMTs with f_t of 136 GHz
具有136GHz的0.18m GaAs Metamorphic HEMT器件
4.
Study and Fabrication of SOI/SiGe MOS Device;
SOI/SiGe MOS器件研究和制备
5.
Characteristic of AlGaN/GaN Heterostructures and of High Electron Mobility Transistors
AlGaN/GaN异质结材料特性与HEMT器件研究
6.
Influence of ~(60)Co γ-ray irradiation on AlGaN/GaN high electron mobility transistors
~(60)Co γ射线辐射对AlGaN/GaN HEMT器件的影响
7.
The Study on the Hot-Carrier Effect in Deep Sub-Micron MOSFET;
深亚微米MOS器件热载流子效应研究
8.
Study on Materials and Processes of Strained Si MOSFETs;
应变硅MOS器件的材料和工艺研究
9.
Direct Tunneling Processes in Nano-Metal-Oxide Semiconductor Devices;
纳米MOS器件中直接隧穿过程的研究
10.
Study on the Structure and Reliability of Deep Submicrion SDE MOSFET;
深亚微米SDE MOS器件结构及可靠性研究
11.
Research on The Breakdown Voltage of SOI High Voltage MOS Devices;
SOI高压MOS器件击穿特性研究
12.
THE STUDY ON TECHNIQUES OF SIC MOS DEVICE AND CIRCUITS;
碳化硅MOS器件和电路技术的研究
13.
Electrical Properties of High-k Gate Dielectric SiGe MOS Devices;
高k栅介质SiGe MOS器件电特性研究
14.
A Research on RTS Noise in Ultra Deep Submicron MOS Devices;
超深亚微米MOS器件RTS噪声研究
15.
Theoretical Investigation of Silicon Carbide Materials and Silicon Carbide Based MOS Devices;
SiC材料及SiC基MOS器件理论研究
16.
Study on Spice Modeling for Strained Si/SiGe MOSFET
基于Spice的应变Si/SiGe MOS器件模型研究
17.
Improvement on SOI DTMOSFET Structure
SOI动态阈值MOS器件结构改进
18.
Total Dose Radiation Characteristics of SOI MOSFET
超高总剂量辐射下SOI MOS器件特性研究