1) lanthanum boride
硼化镧
1.
The properties of boron carbide-lanthanum boride composite material prepared by hot pressed sintering method was tested, and lanthanum boride as a sintering aid for boron carbide was investigated.
83 GPa;总的说来,LaB6添加量对热压烧结B4C-LaB6材料的抗弯强度影响不大;LaB6添加量对热压烧结B4C-LaB6材料的断裂韧性影响较大,随着硼化镧添加量的增加呈成锯齿波变化。
2) Lanthanum hexaboride
六硼化镧
1.
It has been proved that, lanthanum hexaboride (LaB6), with high conductivity, good heat stability and chemical stability, low work function, and active cathode appearance, is an ideal material for field emission array cathodes.
本论文从六硼化镧(LaB6)场发射阵列阴极制备中的关键工艺入手,分析了现有LaB6场发射阵列阴极制备工艺中存在的问题,改进了制备工艺,以有效提高场发射阵列阴极的性能,具体包括:1。
3) LaB6
六硼化镧
1.
Determination of Tungsten Content in LaB6 by Inductively Coupled Plasma-Atomic Emission Spectrometry;
电感藕合等离子发射光谱法测定六硼化镧中钨量
2.
It uses the plasma emission spectrometry to determine Fe,Ca,Mg,Cr,Mn and Cu in LaB6 in the scope of the elements:0.
采用等离子发射光谱法测定六硼化镧中铁、钙、镁、铬、锰、铜,各元素测定范围:0。
4) lanthanum tetraboride
四硼化镧
5) LaB_x thin film
硼化镧薄膜
1.
Lanthanum hexaboride(LaB6) has been widely used for all kinds of large density electron source as it has unique emission characteristics,but the preparation of LaB_x thin films has not deeply studied.
LaB6阴极凭借其优良的发射特性已广泛应用于各种大电流密度的电子源,但是硼化镧薄膜的制备方法以及其发射特性还未得到深入的研究,本文对在Ta金属基底材料上使用电子束蒸发法得到的硼化镧薄膜表面型貌使用扫描电子显微镜进行了观测,使用XPS紫外光电子能谱仪测量了其原子比,薄膜显示出良好的发射特性,利用热发射测量逸出功,利用Richardson直线法计算得到薄膜材料的逸出功为2。
6) lanthanum boride ceramics
硼化镧陶瓷
补充资料：硼化镧
CAS：12008-21-8
分子式：B6La
分子质量：203.78
熔点：2210℃
中文名称：硼化镧
英文名称：Lanthanum boride；(oc-6-11)-lanthanum boride；lanthanum hexaboride；Lanthanum hexaboride；lanthanum boide
分子式：B6La
分子质量：203.78
熔点：2210℃
中文名称：硼化镧
英文名称：Lanthanum boride；(oc-6-11)-lanthanum boride；lanthanum hexaboride；Lanthanum hexaboride；lanthanum boide
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条