1)  recurrent rapid thermal annealing
					
	
					
				
				
	
					
				快速循环退火
				1.
					Amorphous Bi:YIG film was deposited on Si substrates by radio frequency (RF) magnetron sputtering and crystallized by recurrent rapid thermal annealing (RRTA) method.
						
						对于用射频磁控溅射技术在Si基片上制备的Bi:YIG系薄膜,用快速循环退火方法对其进行晶化处理,研究了退火温度对Bi:YIG薄膜结晶状态和形貌的影响,以及退火气氛和循环周期对薄膜性能的影响。
					
					2)  Accelerated Cyclic Spheroidizing annealing
					
	
					
				
				
	
					
				快速循环球化退火
			
					3)  Rapid (recurrent) thermal anneling
					
	
					
				
				
	
					
				快速(循环)退火热处理
			
					4)  rapid thermal annealing
					
	
					
				
				
	
					
				快速退火
				1.
					Effect of rapid thermal annealing on the structure and physical properties of Pt/BST/Pt capacitors
						
						快速退火对Pt/BST/Pt电容器结构和性能的影响
					2.
					5)TiO_3 thin films were prepared by RF-magnetron sputtering method and crystallized by rapid thermal annealing and conventional furnace annealing.
						
						实验表明:钛酸锶钡薄膜在500℃开始结晶,到700℃左右时结晶比较完善,晶化过程中没有出现择优取向;从表面形貌和X射线衍射图综合分析,快速退火的晶化效果要优于常规退火。
					
					5)  rapid annealing
					
	
					
				
				
	
					
				快速退火
				1.
					The optimum rapid annealing process of high speed steel was given.
					
					
						
						
					
						分析了退火温度、加热速度、冷却方式等因素对高速钢组织转变特点和结果的影响,提出了高速钢的快速退火最佳工艺,并对Ac1+(10~20)℃退火与A14+(10~20)℃快速退火工艺进行了对比。
					2.
					Compared to conventional annealing regime,rapid annealing by pulse-current heating can obviously improve the magne.
						
						与常规退火工艺相比,脉冲电流加热快速退火,可在保持延性基本不变的情况下,明显改善合金的磁性;是获得非晶态Fe-B-Si合金磁性优化与良好延性配合的有效途径之
					3.
					The experimental results showed that the complete transformation from fcc FePt to fct FePt was a-chieved by rapid annealing at 850℃ for 30s.
						
						将化学自组装法制备的FePt薄膜进行快速退火,利用X射线衍射仪和振动样品磁强计对薄膜的结构和磁性进行了研究。
					
					6)  RTA
					[英][,ɑ: ti: 'eɪ]  [美]['ɑr 'ti 'e]
					
	
					
				
				
	
					
				快速退火
				1.
					Preparation of Bi_4Ti_3O_(12) thin films with RTA method;
					
					
						
						
					
						Bi_4Ti_3O_(12)薄膜及快速退火工艺的研究
					2.
					Effect of RTA on electrical character of  Bi_4Ti_3O_(12)  thin film;
					
					
						
						
					
						快速退火工艺对钛酸铋薄膜电学性能影响的研究
					3.
					Application of RTA in Improving the Quality of Device Backside Alloy;
					
					
						
						
					
						快速退火在提高芯片背金质量中的应用
					补充资料:软化退火(见低温退火)
		软化退火(见低温退火)
soft-annealing
rU0nhUO tUihUO软化退火(soft一annealing)见低温退火。
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
	参考词条