1) pulsed laser deposition
脉冲激光淀积
1.
1)O thin films were fabricated on Si substrates by pulsed laser deposition.
利用脉冲激光淀积的方法在Si衬底上生长出了c轴高度取向的ZnO和Zn_(0。
2.
Highly c-axis oriented ZnO thin films were fabricated on Si(111) substrates at different substrate temperatures by pulsed laser deposition .
在不同的衬底温度下,通过脉冲激光淀积的方法在Si衬底上生长出c轴高度取向的ZnO薄膜。
3.
Pb 0 72 La 0 28 TiO 3(PLT28) thin films have been prepared on Pt/Ti/SiO 2/Si substrates by pulsed laser deposition under various oxygen pressure.
利用脉冲激光淀积法在Pt Ti SiO2 Si衬底上制备了 2 8mol%La掺杂钛酸铅薄膜 。
2) pulsed excimer laser deposition
脉冲激光淀积
1.
80)Ti_3O_(12)) were successfully grown on p-SiO_2 substrates by pulsed excimer laser deposition.
用脉冲激光淀积法成功地在p-S i底片上制备了高c轴取向的B i3。
2.
80Ti3O12 (BNT) were successfully grown on p-SiO2 substrates by pulsed excimer laser deposition.
用脉冲激光淀积方法在p-Si基片上制备了高c轴取向的Bi4–xRxTi3O12(BNT)铁电薄膜,研究了掺钕量x对薄膜铁电性能的影响,结果表明,当x=0。
3) reactively pulsed laser sputtering deposition
反应式脉冲激光溅射淀积
1.
The effect of laser energy density,pulsed frequency on the construction and properties of AlN thin films prepared by reactively pulsed laser sputtering deposition was discussed.
就反应式脉冲激光溅射淀积制备氮化铝（ＡｌＮ）薄膜的过程，讨论了激光脉冲能量密度及脉冲频率对所制备薄膜结构性能的影响，并对薄膜的化学稳定性作了比较详细的研究。
4) PLD
脉冲激光沉积
1.
Surface Morphology and Photoluminescence Properties of ZnO Films Deposited with PLD;
脉冲激光沉积ZnO薄膜的微结构及发光性能
2.
PLD Preparation and Application of TiNi SMA Thin Film;
TiNi合金薄膜的脉冲激光沉积制备与应用
3.
Microstructures and Properties of Semiconductor Materials with Pulsed Laser Deposition (PLD);
脉冲激光沉积（PLD）半导体材料结构特性的研究
5) pulse laser deposition
脉冲激光沉积
1.
Preparation of single-phase Nd_(1.85)Ce_(0.15)CuO_4 thin films by pulse laser deposition and the laser-induced thermoelectric voltage effect
脉冲激光沉积生长单相的Nd_(1.85)Ce_(0.15)CuO_4薄膜及其激光感生热电电压效应
2.
In order to study the surface emission mechanism of La2O3-Mo cathode,film cathodes were studied by using a set of equipment,specially designed for cathode research,with which film cathode can be prepared by pulse laser deposition.
为了研究镧钼阴极表面发射机制,采用专为研究阴极设计的与俄歇能谱仪相连的脉冲激光沉积装置制备薄膜阴极。
3.
Unhydrogenated diamond-like films were prepared by pulse laser deposition technique at different substrate temperature.
使用脉冲激光沉积技术制备了系列无氢类金刚石薄膜,测量了样品的Raman光谱、光吸收光谱和光致发光光谱,研究了薄膜结构和光致发光性质与制备条件的依赖关系。
6) pulsed laser deposition
脉冲激光沉积法
1.
Recent advances on ZnO-based films synthesized by pulsed laser deposition;
脉冲激光沉积法制备ZnO基薄膜研究进展
2.
The even single phase βFeSi_2 thin films were prepared by femtosecond pulsed laser deposition(PLD) on Si(111) wafers at different temperature using an FeSi_2 alloy target,and excimer(nanosecond) PLD was introduced to prepared β-FeSi_2 thin films also.
用FeSi2合金靶作为靶材,采用准分子激光沉积法在Si(111)单晶基片上制备了单相的-βFeSi2薄膜,并将飞秒脉冲激光沉积法(PLD)引入到-βFeSi2薄膜的制备工艺中;用X射线衍射仪(XRD),场扫描电镜(FSEM),能谱仪(EDS),紫外可见光光谱仪研究了薄膜的结构、组分、表面形貌和光学性能。
3.
5CoO3(LSCO) oxide thin films were realized on SrTiO3(001) substrates by pulsed laser deposition.
利用脉冲激光沉积法在STO(001)基片上外延生长了La0。
补充资料：超短脉冲激光频率转换材料
超短脉冲激光频率转换材料
materials for ultrashort pulses laser frequency conversion
超短脉冲激光频率转换材料materials forultrashort Pulses laser frequeney eonversion用于脉冲宽度从微微秒直到几十毫微微秒激光的频率转换材料。超短脉冲激光具有短的脉宽，较好的模式特性以及高的峰值功率，从而具有很强的非线性性能。经频率转换后，短波的超短脉冲可产生强的光化学反应，是探索微观世界和超高速现象的极为有用的光源。此外，采用薄片倍频材料的超短脉冲倍频，可以作为超短脉冲脉宽测量的一种简便有效的方法，在技术上有实用价值。 对超短脉冲激光频率转换材料的性能主要有以下要求:①高的光损伤闭值。由于超短脉冲的高峰值功率，因而对材料的光损伤阑值提出高的要求，一般要大于GW/cmZ。②相位匹配特性。超短脉冲在空间的尺度短到毫米及几百微米量级，短脉冲波包在材料中以群速度传播。因而，除一般的相速度匹配外，还应满足群速度匹配才能获得较高的能量转换效率。对光学均匀材料，要求基频和倍频波的折射率色散小，才能获得较好的群速度匹配。对I类匹配，群速度要求稍低;对n类匹配要求太苛刻，很难应用。由于群速度失配存在，一般器件只取亚毫米的厚度。过长的光程于能量转换无补，反而引入脉宽的展宽以及能量的损耗。③透过波段。首先要求对参与频率转换的激光波长有高的透过率。对超短脉冲应用场合，材料应有更短的紫外吸收边。其原因是吸收边会增加材料的折射率色散;远离使用波长的吸收边，可使材料获得较好的群速度匹配。 钱激光超短脉冲频率转换的常用材料是磷酸二氢钾(KDP)类晶体。此外，新开发的三硼酸锉(LBO)晶体，由于其高的抗光损伤阑值、好的紫外透过率以及小的色散，也是好的超短脉冲频率转换用材料。有机晶体精氨酸磷酸盐(LAP)和氛化精氨酸磷酸盐(D一LAP)也可用作超短脉冲频率转换用材料。 (邵宗书)
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条