1)  pinch-off region
					 
	
					
				
				 
	
					
				夹断区
				1.
					In this paper,the factors which affect the channel length and the length of the pinch-off region of the channel are discussed,and the function of the VDMOSFET is improved by optimizing the channel section.
						
						讨论了影响沟道长度及沟道的夹断区长度的因素,通过沟道区的优化促进了VDMOSFET性能的提高。
					
					3)  pinch cutting
					 
	
					
				
				 
	
					
				夹断部切断
			
					4)  Interacting faults
					 
	
					
				
				 
	
					
				夹角断层
			
					5)  Fracture fixture
					 
	
					
				
				 
	
					
				断料夹具
			
					6)  pinch off voltage
					 
	
					
				
				 
	
					
				夹断电压
				1.
					Investigation of the pinch off voltage of SiC-MESFET;
					 
					
						
						 
					
						SiC-MESFET器件的夹断电压
					2.
					The effects of parameters such as temperature,acceptor density,and activation rate on channel depth a,pinch off voltage are studied.
						
						考虑离子注入沟道和沟道深度的影响 ,提出了精确的离子注入 4 H- Si C MESFET器件夹断电压的理论计算方法 。
					补充资料:夹叙夹议
		1.边叙述边议论。
		
		说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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